Wafer-Level Low-Temperature Solid-Liquid Inter-Diffusion Bonding With Thin Au-Sn Layers for MEMS Encapsulation

IEEEA novel solid-liquid inter-diffusion (SLID) bonding process is developed allowing to use thin layers of the Au-Sn material in wafer-level microelectromechanical systems (MEMS) packaging while providing a good bonding strength. The bond material layers are designed to have a robust bond material configuration and a metallic bond with a high re-melting temperature, which is an important advantage of SLID bonding or with its alternative name, transient liquid phase (TLP) bonding. The liquid phase in SLID bonding is the gold-rich eutectic liquid of the Au-Sn material system, where the bonding temperature is selected to be 320 °C for a reliable bonding. The average shear strength of the bonds is measured to be 38± 1.8 MPa. The hermeticity of the package is tested with the He-Leak test according to MIL-STD 883, which yields a leak value lower than 0.1 x 10⁻⁹ atm.cm³/s. The vacuum inside the package without a getter is calculated as 2.5 mbar after cap wafer thinning. The vacuum level is well preserved after post-processes such as annealing at 400 °C and the dicing process. These results verify that thin layers of Au-Sn materials can be used reliably with the SLID or TLP bonding technique using the new approach proposed in this study. [2020-0353]
Journal of Microelectromechanical Systems


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Citation Formats
O. Temel, Y. E. Kalay, and T. Akın, “Wafer-Level Low-Temperature Solid-Liquid Inter-Diffusion Bonding With Thin Au-Sn Layers for MEMS Encapsulation,” Journal of Microelectromechanical Systems, pp. 0–0, 2020, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/69980.