Wafer level hermetic encapsulation of MEMS inertial sensors using SOI cap wafers with vertical feedthroughs

Date

2014-02-26

Author

Mert Torunbalci, Mustafa
Alper, Said Emre
Akın, Tayfun

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

127
views

0
downloads

This paper reports a new, inherently simple, and high-yield wafer-level hermetic encapsulation method developed for MEMS inertial sensors, enabling lead transfer using vertical feedthroughs that do not require any complex via-refill or trench-refill processes. The process requires only seven masks to complete both the sensor and cap wafers, whereas the combined yield for the sealing and lead transfer is experimentally verified to be above 90%. Hermetic encapsulation is achieved by Au-Si eutectic bonding, and the pressure inside the encapsulated cavity has been characterized to be as low as 1 mTorr with a thin film getter. MEMS resonators packaged with the proposed method demonstrated quality factors over 125,000. The pressure inside the encapsulated cavities has been monitored for 4 months since the first prototypes, and it is observed to be stable throughout this period.

Subject Keywords

Wafer level hermetic packaging, Vertical feedthroughs, Au-Si eutectic bonding, MEMS inertial sensors

URI

https://hdl.handle.net/11511/44735

DOI

https://doi.org/10.1109/isiss.2014.6782539

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

Suggestions

OpenMETU
Core

Wafer level hermetic sealing of MEMS devices with vertical feedthroughs using anodic bonding Torunbalci, Mustafa Mert; Alper, Said Emre; Akın, Tayfun (2015-04-01) This paper presents a new method for wafer-level hermetic packaging of MEMS devices using a relatively low temperature anodic bonding technique applied to the recently developed advanced MEMS (aMEMS) process. The aMEMS process uses vertical feedthroughs formed on an SOI cap wafer, eliminating the need for any complex via-refill or trench-refill steps while forming the vertical feedthroughs. The hermetic sealing process is achieved at 350 degrees C by using an anodic bonding potential of 600 V. The bonding p...
Gold-tin eutectic bonding for hermetic packaging of MEMS devices with vertical feedthroughs Torunbalci, Mustafa Mert; Demir, Eyup Can; Donmez, Inci; Alper, Said Emre; Akın, Tayfun (2014-11-05) This paper presents a new method for wafer-level hermetic encapsulation of MEMS devices using low-temperature (280 to 300°C) Au-Sn eutectic bonding applied to the recently developed advanced MEMS (A-MEMS) process of the METU-MEMS Research Center, which uses an SOI cap wafer with vertical feedthroughs that does not need any complex via-refill or trench-refill process steps. The Au-Sn eutectic bonding process is achieved at 300°C with a bond pressure of 2 MPa by using a sealing alloy thickness less than 1.5 μ...
Advanced MEMS Process for Wafer Level Hermetic Encapsulation of MEMS Devices Using SOI Cap Wafers With Vertical Feedthroughs Torunbalci, Mustafa Mert; Alper, Said Emre; Akın, Tayfun (2015-06-01) This paper reports a novel and inherently simple fabrication process, so-called advanced MEMS (aMEMS) process, that is developed for high-yield and reliable manufacturing of wafer-level hermetic encapsulated MEMS devices. The process enables lead transfer using vertical feedthroughs formed on an Silicon-On-Insulator (SOI) wafer without requiring any complex via-refill or trench-refill processes. It requires only seven masks to fabricate the hermetically capped sensors with an experimentally verified process...
Fabrication of a Three-Axis Capacitive MEMS Accelerometer on a Single Substrate Aydemir, Akin; Akın, Tayfun (2015-11-04) This paper presents a new fabrication approach and a design for the fabrication of a three-axis capacitive MEMS accelerometer where differential sensing is enabled for all sense directions. In this approach, individual lateral and vertical axis accelerometers are fabricated in the same die on an SOI wafer which is eutectically bonded to a glass substrate. Differential sensing for the vertical axis accelerometer is realized by defining the proof mass of the accelerometer on the structural layer of the SOI wa...
A Method of Fabricating Vacuum Packages with Vertical Feedthroughs in a Wafer Level Anodic Bonding Process Torunbalci, Mustafa Mert; Alper, Said Emre; Akın, Tayfun (2014-09-10) This paper presents a new method for wafer level vacuum packaging of MEMS devices using anodic bonding together with vertical feedthroughs formed on an SOI cap wafer, eliminating the need for any sealing material or any complex via-refill or trench-refill vertical feedthrough steps. The packaging yield is experimentally verified to be above 95%, and the cavity pressure is characterized to be as low as 1 mTorr with the help of a thin-film getter. The shear strength of several packages is measured to be above...

Citation Formats

M. Mert Torunbalci, S. E. Alper, and T. Akın, “Wafer level hermetic encapsulation of MEMS inertial sensors using SOI cap wafers with vertical feedthroughs,” 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/44735.