Effects of Substrate Temperature on material characteristics of sputtered Aluminum doped ZnO thin films

Date

2016-09-23

Author

Bayraklı, Özge
Emir, Cansu
Güllü, Hasan Hüseyin
Parlak, Mehmet

Metadata

Show full item record

Item Usage Stats

238
views

0
downloads

Transparent conductive layers (TCOs) attract the attention in opto-electronic and photovoltaic device applications due to their conductivity and transparency characteristics in the visible region of the solar spectrum. There are various TCO thin film layers, and indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) are the most popular thin films such as the desired material characteristics of SnO2and ZnO, respectively. In literature, the works indicated that the characteristics of these films can be changed by using different deposition techniques. In this work, sputtering technique was used to fabricate the AZO film samples. AZO film samples were deposited on the ultrasonically cleaned commercial soda lime glass substrates at the substrate temperature of 300-573 K. The samples were fabricated by using DC/RF magnetron sputtering system. In general, the work was concentrated on the structural, electrical and optical properties of the AZO thin films with respect to the substrate temperature. In addition, post-annealing processes were applied to investigate the annealing effect on the material properties. The characterizations of thethin films were done by X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDS) for structural analysis, UV/Vis transmission measurements for optical analysis and dark conductivity measurements for electrical analysis. In XRD spectra, all the deposited thin films were found highly oriented in the (002) orientation direction. By using transmission values, band gap energies of the films were investigated under the effect of substrate and annealing temperature. According to corresponding Tauc plots, the value of the band gap of AZO thin films increased with increasing deposition temperature. In addition, electrical measurements were done by four-point probe system and the electrical resistivity of the AZO films were quite sensitive to the substrate temperature and the value of resistivity values were found in decreasing behavior with increasing deposition temperature.

Subject Keywords

Thin film, Annealing, Sputtering, Transparent conductive layer

URI

https://hdl.handle.net/11511/78434

Conference Name

SATF 2016 Science and Applications of Thin Films Conference & Exhibition (19 - 23 Eylül 2016)

Collections

Department of Physics, Conference / Seminar

Suggestions

OpenMETU
Core

Effect of Laser Wavelength on AZO Surface Texturing by Direct Laser Processing / Patterning for Thin-Film Silicon Solar Cells Applications Demircioğlu, Zeynep; Nasser, Hisham; Balog, Robert S.; Turan, Raşit (2018-01-01) Surface texturing of transparent conductive oxides is crucial to improve the fraction of incident light trapped in the absorber layer of thin film silicon based solar cells to improve the device performance. In this work, we fabricate and compare periodic, overlapping, and random surface textures and patterns on aluminium doped zinc oxide (AZO) using direct laser processing. The effects of the used laser wavelength, laser operating frequency, and pulse periodicity on the structural, morphological, and optic...
Investigation of material properties of magnetron sputtered CuAg-In-Se thin films Güllü, Hasan Hüseyin; Parlak, Mehmet (null; 2016-09-23) Thin films of copper based chalcopyrite absorber materials are attracting the attention of many researchers because of their favorable optoelectronic properties and good stability makes them suitable for photovoltaic and optoelectronic device applications. These compounds are particularly suitable for making p-n hetero-junctions with the II-VI compounds. Therefore, the utilization of I-III-VI2 group of chalcopyrite semiconductors has been reported in the literature for application in thin film solar cells. ...
GROWTH, CHARACTERIZATION AND DEVICE APPLICATIONS OF CADMIUM ZINC TELLURIDE THIN FILMS Doğru Balbaşı, Çiğdem; Parlak, Mehmet; Department of Physics (2022-5-25) CdZnTe is an II-VI group semiconductor material with significant properties used in many critical industrial applications, such as photovoltaic devices, photodiodes, photoconductors, room temperature gamma-ray spectroscopy, X-ray imaging, and infrared detectors. In Particular, CdZnTe is a promising material for solar cell application as an absorber layer due to its direct tunable bandgap property, high atomic number with strong absorption, excellent optoelectronic properties, and long-term stability. Howeve...
Production of hydrogenated nanocrystalline silicon based thin film transistor Aliyeva, Tamila; Atılgan, İsmail; Department of Physics (2010) The instability under bias voltage stress and low mobility of hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT), produced by plasma enhanced chemical vapor deposition (PECVD) technique, are the main problems impeding the implementation of active matrix arrays for light emitting diode display panels and their peripheral circuitry. Replacing a-Si:H by hydrogenated nanocrystalline silicon film (nc-Si:H) seems a solution due to its higher mobility and better stability. Therefore nc-Si:H TFT was...
Effect of Laser Parameters and Post-Texturing Treatments on the Optical and Electrical Properties of Laser Textured c-Si Wafers RADFAR, Behrad; ES, FIRAT; NASSER, Hisham; AKDEMİR, Ozan; Bek, Alpan; Turan, Raşit (2018-03-21) Surface plays a crucial role in the performance of crystalline silicon (cSi) based solar cells as it affects both electrical and optical properties. To minimize reflection from the flat surface and thus improve light trapping, the cSi wafers must be textured. For mono-cSi cells, anisotropic alkaline etchants are commonly utilized to create pyramids on the surface. However, this method is not viable for multi-crystalline silicon (mc-Si) wafers due to the presence of different and random crystallographic orie...

Citation Formats

Ö. Bayraklı, C. Emir, H. H. Güllü, and M. Parlak, “Effects of Substrate Temperature on material characteristics of sputtered Aluminum doped ZnO thin films,” presented at the SATF 2016 Science and Applications of Thin Films Conference & Exhibition (19 - 23 Eylül 2016), Çeşme, İzmir, Türkiye, 2016, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/78434.