The transient state effects of metal oxide resistor on tranmission system with series compensaiton.

Uzun, Hüsein


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To increase the reliability and the maximum performance of AlGaN/GaN high electron mobility transistors (HEMTs), gate field plates are frequently used with surface passivation. Although significant research has been done to understand the electrical effects of gate field plates on devices, their thermal effects are still not fully understood. For this purpose, electrothermal simulations are performed on devices with and without gate field plates having different thicknesses of Si3N4 surface passivation at t...
Citation Formats
H. Uzun, “The transient state effects of metal oxide resistor on tranmission system with series compensaiton.,” Middle East Technical University, 1986.