Laser Crystallization of Si Thin Film via Pulsed IR Laser for Ultra-Thin Crystalline Solar Cells

2018-07-06
Çınar, Kamil
Salar, H Sedani
Dönerçark, Ergi
Avishan, Nardin
Aytaç, A Ege
Bek, Alpan
PVCON2018 (4 - 06 Temmuz 2018)

Suggestions

Laser Photochemical Nanostructuring of Silicon for Surface Enhanced Raman Spectroscopy
Akbıyık, Alp; Avishan, Nardin; Demirtaş, Özge; Demir, Ahmet Kemal; Yüce, Emre; Bek, Alpan (2022-05-01)
Laser polishing of optical fiber end surface
Udrea, M; Orun, H; Alacakir, A (2001-09-01)
A new application of glass surface treatment is presented. Fine polishing of optical fiber end (silica type), core/cladding surface is performed. A low-power monomode longitudinal 10-W continuous wave CO2 laser is used. Laser power density is 140 W/cm(2). The beam is spatially filtered to increase the beam uniformity. A decrease of the roughness from 2.5 mum average to less than 100 nm is achieved. The microstructure of the surfaces is studied using atomic force microscopy. An optimum irradiation time of ex...
Laser-induced periodic nano-patterning of solar cell surfaces for low-cost and low material loss fabrication of light management interfaces
Pavlov, Ihor; Genç, Ezgi; Abak, Musa Kurtuluş; Nasser, Hisham; Turan, Raşit; Bek, Alpan (null; 2019-09-11)
Laser Sculpting and Processing of Silicon for Photovoltaics
Bek, Alpan (2017-12-07)
Direct writing of photonic and fluidic devices in Si by means of laser processing is of great importance as it promisses low-cost, rapid fabrication of Si devices. Although Si microfabrication techniques are well-established and technologically mature, the fabrication time and costs are still of importance as clean room environment, repetitive photomasking, mask aligning, thermal processing steps are typical requirements. Advancements in fiber laser technology has reached a stage such that high average powe...
Laser Crystallization of Amorphous Ge Thin Films via a Nanosecond Pulsed Infrared Laser
Korkut, Ceren; Cinar, Kamil; Kabacelik, Ismail; Turan, Raşit; Kulakci, Mustafa; Bek, Alpan (2021-08-01)
Understanding the dynamics of the laser crystallization (LC) process of Ge thin films by nanosecond (ns) pulsed infrared (IR) lasers is important for producing homogeneous, crack-free crystalline device-grade films for use in thin-film transistors, photo-detectors, particle detectors, and photovoltaic applications. Our motivation is to describe a ns IR laser-based crystallization process of Ge by implementing suitable parameters to fabricate thin-film devices. Our LC technique was applied to crystallize thi...
Citation Formats
K. Çınar, H. S. Salar, E. Dönerçark, N. Avishan, A. E. Aytaç, and A. Bek, “Laser Crystallization of Si Thin Film via Pulsed IR Laser for Ultra-Thin Crystalline Solar Cells,” presented at the PVCON2018 (4 - 06 Temmuz 2018), 2018, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/86003.