Growth and Characterization of Stoichiometric Cu2ZnSnS4 Crystal Using Vertical Bridgman Technique

Date

2021-11-01

Author

Peksu, Elif
Terlemezoglu, Makbule
Parlak, Mehmet
Karaağaç, Hakan

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Stoichiometric Cu2ZnSnS4 (CZTS) single phase crystals are successfully grown in a single-zone vertical furnace by Bridgman technique. X-ray diffraction (XRD) and Raman spectroscopy measurements are employed to investigate the structural properties of the grown crystals, which verifies the formation of mono-phase CZTS crystals with kesterite structure. The energy-dispersive X-ray analysis (EDS) indicates the growth of CZTS single phase crystals with a nearly stoichiometric chemical composition. The carrier concentration, mobility, and resistivity of the crystals are determined from Hall Effect measurements. At room temperature, the respective values are found to be 4.0 x 10(15) cm(-3), 1.0 cm(2) Vs(-1), and 1540 omega cm. The activation energies for the acceptor levels are also determined using the temperature-dependent hole concentration measurement. Cu-Zn-antisite originated acceptor level with activation energies of approximate to 121 meV is identified in a nearly stoichiometric kesterite structure.

Subject Keywords

conductivity, Cu2ZnSnS4, mobility, SOLAR-CELL, THIN-FILMS, PHASE-EQUILIBRIA

URI

https://hdl.handle.net/11511/94811

Journal

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

DOI

https://doi.org/10.1002/pssa.202100595

Collections

Department of Physics, Article

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Citation Formats

E. Peksu, M. Terlemezoglu, M. Parlak, and H. Karaağaç, “Growth and Characterization of Stoichiometric Cu2ZnSnS4 Crystal Using Vertical Bridgman Technique,” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, pp. 0–0, 2021, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/94811.