Growth and Characterization of Stoichiometric Cu2ZnSnS4 Crystal Using Vertical Bridgman Technique

Date

2021-11-01

Author

Peksu, Elif
Terlemezoglu, Makbule
Parlak, Mehmet
Karaağaç, Hakan

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

148
views

0
downloads

Stoichiometric Cu2ZnSnS4 (CZTS) single phase crystals are successfully grown in a single-zone vertical furnace by Bridgman technique. X-ray diffraction (XRD) and Raman spectroscopy measurements are employed to investigate the structural properties of the grown crystals, which verifies the formation of mono-phase CZTS crystals with kesterite structure. The energy-dispersive X-ray analysis (EDS) indicates the growth of CZTS single phase crystals with a nearly stoichiometric chemical composition. The carrier concentration, mobility, and resistivity of the crystals are determined from Hall Effect measurements. At room temperature, the respective values are found to be 4.0 x 10(15) cm(-3), 1.0 cm(2) Vs(-1), and 1540 omega cm. The activation energies for the acceptor levels are also determined using the temperature-dependent hole concentration measurement. Cu-Zn-antisite originated acceptor level with activation energies of approximate to 121 meV is identified in a nearly stoichiometric kesterite structure.

Subject Keywords

conductivity, Cu2ZnSnS4, mobility, SOLAR-CELL, THIN-FILMS, PHASE-EQUILIBRIA

URI

https://hdl.handle.net/11511/94811

Journal

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

DOI

https://doi.org/10.1002/pssa.202100595

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Characterization of CuIn0.7Ga0.3Se2 Thin Films Deposited by Single Stage Thermal Evaporation Process Karaağaç, Hakan; Peksu, Elif; Behzad, Hamed; Akgoz, Sare; Parlak, Mehmet (2017-05-26) Single phase CuIn0.7Ga0.3Se2 (CIGS) thin films are successfully deposited on glass substrates via a single stage thermal evaporation from a stoichiometric powder of CIGS. X-ray photoelectron spectroscopy measurements reveal the existence of Cu- and Ga-rich surface of the as-grown CIGS thin films. The post-growth annealing process lead to migration of the metallic atoms from the surface region into the bulk during the crystallization process, which subsequently causes a significant reduction in the reflectio...
Growth and process conditions of aligned and patternable films of iron(III) oxide nanowires by thermal oxidation of iron Hiralal, P.; Ünalan, Hüsnü Emrah; Wijayantha, K. G. U.; Kursumovic, A.; Jefferson, D.; MacManus-Driscoll, J. L.; Amaratunga, G. A. J. (IOP Publishing, 2008-11-12) A simple, catalyst-free growth method for vertically aligned, highly crystalline iron oxide (alpha-Fe2O3) wires and needles is reported. Wires are grown by the thermal oxidation of iron foils. Growth properties are studied as a function of temperature, growth time and oxygen partial pressure. The size, morphology and density of the nanostructures can be controlled by varying growth temperature and time. Oxygen partial pressure shows no effect on the morphology of resulting nanostructures, although the oxide...
Growth and morphological characterization of intrinsic hydrogenated amorphous silicon thin film for a-Si:H/c-Si heterojunction solar cells Pehlivan, Özlem; Tomak, Mehmet; Kodolbaş, Alp Osman; Department of Physics (2013) Passivation of the crystalline silicon (c-Si) wafer surface and decreasing the number of interface defects are basic requirements for development of high efficiency a-Si:H/c-Si heterojunction solar cells. Surface passivation is generally achieved by development of detailed silicon wafer cleaning processes and the optimization of PECVD parameters for the deposition of intrinsic hydrogenated amorphous silicon layer. a-Si:H layers are grown in UHV-PECVD system. Solar cells were deposited on the p type Cz-silic...
Deposition and Characterization of ZnSnSe2 Thin-Films Deposited by Using Sintered Stoichiometric Powder Bayrakli Surucu, Ozge; Güllü, Hasan Hüseyin (2019-09-01) In this work, ZnSnSe2 (ZTSe) thin films were deposited using crystalline powder grown by vertical Bridgman-Stockbarger technique. The deposition process was carried out by means of e-beam evaporation on the well-cleaned soda lime glass substrates and keeping them at the substrate temperature of 200 degrees C. The structural, optical and electrical properties of ternary ZTSe thin films were investigated depending on the annealing temperature at 250 and 300 degrees C. X-ray diffraction analysis showed that as...
Growth and characterization of Tl3InSe4 single crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Elsevier BV, 2011-06-01) Tl3InSe4 single crystal has been successfully prepared by the Bridgman crystal growth technique. The crystal that is reported for the first time is found to be of tetragonal structure with lattice parameters of a=0.8035 and c=0.6883 nm. The electrical resistivity and Hall effect measurements on the crystal revealed a conductivity type conversion from p- to n-type at a critical temperature of 283 K. The electron to hole mobility ratio is found to be 1.10. The analysis of the temperature-dependent electrical ...

Citation Formats

E. Peksu, M. Terlemezoglu, M. Parlak, and H. Karaağaç, “Growth and Characterization of Stoichiometric Cu2ZnSnS4 Crystal Using Vertical Bridgman Technique,” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, pp. 0–0, 2021, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/94811.