Growth and characterization of Tl3InSe4 single crystals

Date

2011-06-01

Author

QASRAWI, ATEF FAYEZ HASAN
Hasanlı, Nızamı

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Tl3InSe4 single crystal has been successfully prepared by the Bridgman crystal growth technique. The crystal that is reported for the first time is found to be of tetragonal structure with lattice parameters of a=0.8035 and c=0.6883 nm. The electrical resistivity and Hall effect measurements on the crystal revealed a conductivity type conversion from p- to n-type at a critical temperature of 283 K. The electron to hole mobility ratio is found to be 1.10. The analysis of the temperature-dependent electrical resistivity, Hall coefficient and carrier concentration data reveals the extrinsic type of conduction with donor impurity levels that behave as acceptor levels when are empty. The data analysis allowed the calculation of the hole and the electron effective masses as 0.654m(0) and 0.119m(0), respectively. In addition, the temperature-dependent Hall mobility in the n-region is found to be limited by the electron-phonon short-range interactions scattering with an electron-phonon coupling constant of 0.21.

Subject Keywords

Mechanical Engineering, General Materials Science, Mechanics of Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/40161

Journal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

DOI

https://doi.org/10.1016/j.mssp.2011.02.009

Collections

Department of Physics, Article

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Citation Formats

A. F. H. QASRAWI and N. Hasanlı, “Growth and characterization of Tl3InSe4 single crystals,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, pp. 175–178, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40161.