Date

2022-2

Author

Bektaş, Tunç

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The aim of this study is to characterize the structural, optical and electrical proper ties of both SnSbSe bulk crystal and SnSbSe thin films. For this purpose, SnSbSe crystal were grown and SnSbSe thin film were deposited on glass substrates by using vertical Bridgman and thermal evaporation methods respectively. For SnSbSe bulk crystal, Energy Dispersive X-Ray, Scanning Electron Microscopy, X-Ray Diffrac tion and Raman measurement were performed to investigate the structural analysis. Also, spectroscopic ellipsometry measurement carried out to obtain index of refrac tion, extinction coefficient and optical band gap for optical characterization. The I-V measurement of a crystal also performed in dark and illuminated manner for electri cal characterization. To examine the effect of annealing on the physical properties of SnSbSe thin films, samples were annealed at 100 ◦C, 200 ◦C, 300 ◦C and 400 ◦C for 30 minutes and one of the samples kept as ‘as grown’. The structural properties of these samples were analyzed by Energy Dispersive X-Ray, Scanning Electron Mi croscopy, X-Ray Diffraction, Raman and Atomic Force Microscopy analysis. For the optical caharacterization, UV-Vis spectroscopy measurement carried out for obtaining absorption coeeficients and the optical band gap of samples and observing the effect of annealing on band gap. For the electrical characterization, the temperature depen dent photoconductivity measurement performed for measuring the conductivities and activation energies of samples.

Subject Keywords

SnSbSe, Bridgman growth, thermal evaporation, structural, optical and electrical characterization

URI

https://hdl.handle.net/11511/96265

Collections

Graduate School of Natural and Applied Sciences, Thesis