Characterization of GZO thin films fabricated by RF magnetron sputtering method and electrical properties of In/GZO/Si/Al diode

Date

2019-11-01

Author

Surucu, O. Bayrakli

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

35
views

0
downloads

The main focus of this work is the structural and optical characterization of Ga-doped ZnO (GZO) thin film and determination of the device behavior of In/GZO/Si/Al diode. GZO thin films were deposited by RF magnetron sputtering technique from single target. The structural and morphological properties of GZO film were investigated by X-ray diffraction (XRD), Raman scattering, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy analysis (EDS) measurements. Optical properties of the film were determined with transmission measurement. Device characterization of In/GZO/Si/Al diode were done with the analysis of temperature dependent current voltage (I-V) measurement. The current conduction mechanism was investigated with the Thermionic Emission (TE) method. The deviation from the pure TE method was observed and this deviation was analyzed under the assumption of Gaussian Distribution (GD) of barrier height (TE emission with GD). The mean standard deviation and zero bias barrier height were calculated as 0.0268 (about %3) and 1.239 eV, respectively. Richardson constant was found to be as 115.42 A/cm(2) K-2 using the modified Richardson plot. In addition, series resistance R-s was obtained using Cheung's function. Finally, the interface state densities D-it were determined by using the forward bias I-V results.

Subject Keywords

Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/63846

Journal

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

DOI

https://doi.org/10.1007/s10854-019-02286-w

Collections

Department of Electrical and Electronics Engineering, Article

Suggestions

OpenMETU
Core

Characterization of chiral metamaterial sensor with high sensitivity Dalgac, Sekip; BAKIR, MEHMET; KARADAĞ, FARUK; ÜNAL, EMİN; KARAASLAN, MUHARREM; Sabah, Cumali (Elsevier BV, 2020-02-01) In this study, a chiral metamaterial sensor applications are created by placing asymmetrically two meander line front and back side of the substrate layer. Characterization of the dielectric constant, thickness and loss tangent have been performed both in simulation and experimental methods. Different Arlon type materials used for showing the effects of dielectric constant on transmission coefficient. Obtained bandwidths for characterization are greater than the similar studies which verifyies increased sen...
Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoğlu, Makbule; Yildiz, D. E.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-08-01) In this study, temperature-dependent current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements are carried out for the electrical characterization of a zinc oxide (ZnO) thin film-based diode. The sandwich structure in the form of Ag/ZnO/Si/Al is investigated at temperatures between 220 and 360 K and in the frequency region of 1 kHz-1 MHz. ZnO thin film layer is deposited on a p-Si wafer substrate as a transparent conductive oxide layer by taking in...
Frequency effect on electrical and dielectric characteristics of In/Cu2ZnSnTe4/Si/Ag diode structure Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoğlu, Makbule; Yildiz, D. E.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-05-01) In/Cu2ZnSnTe4/Si/Ag diode structure was fabricated by sputtering Cu2ZnSnTe4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with s...
Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices Yilmaz, K.; Parlak, Mehmet; Ercelebi, C. (IOP Publishing, 2007-12-01) In this study, device behavior of amorphous InSe thin films was investigated through I-V, C-V and spectral response measurements onto SnO2/p-InSe/metal Schottky diode structures. Various metal contacts such as Ag, Au, Al, In and C were deposited onto amorphous p-InSe films by the thermal evaporation technique. The best rectifying contact was obtained in a SnO2/p-InSe/Ag Schottky structure from I-V measurements, while the Au contact had poor rectification. Other metal contacts (Al, In and C) showed almost oh...
On the electrical and charge conduction properties of thermally evaporated MoOx on n- and p-type crystalline silicon GÜLNAHAR, MURAT; Nasser, Hisham; Salimi, Arghavan; Turan, Raşit (Springer Science and Business Media LLC, 2020-11-01) In this work, the electrical and charge conduction characteristics of a contact structure featuring thermally evaporated MoOx, deposited on n- and p-type crystalline silicon (c-Si), are extensively investigated by room temperature current-voltage (I-V), transmission line measurements (TLM), and temperaturedependent current-voltage measurements (I-V-T). XRD diffraction spectrum shows that the deposited MoOx film exhibits amorphous nature. From TLM measurements, the values of contact resistivity are calculate...

Citation Formats

O. B. Surucu, “Characterization of GZO thin films fabricated by RF magnetron sputtering method and electrical properties of In/GZO/Si/Al diode,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, pp. 19270–19278, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/63846.