Characterization of GZO thin films fabricated by RF magnetron sputtering method and electrical properties of In/GZO/Si/Al diode

Surucu, O. Bayrakli
The main focus of this work is the structural and optical characterization of Ga-doped ZnO (GZO) thin film and determination of the device behavior of In/GZO/Si/Al diode. GZO thin films were deposited by RF magnetron sputtering technique from single target. The structural and morphological properties of GZO film were investigated by X-ray diffraction (XRD), Raman scattering, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy analysis (EDS) measurements. Optical properties of the film were determined with transmission measurement. Device characterization of In/GZO/Si/Al diode were done with the analysis of temperature dependent current voltage (I-V) measurement. The current conduction mechanism was investigated with the Thermionic Emission (TE) method. The deviation from the pure TE method was observed and this deviation was analyzed under the assumption of Gaussian Distribution (GD) of barrier height (TE emission with GD). The mean standard deviation and zero bias barrier height were calculated as 0.0268 (about %3) and 1.239 eV, respectively. Richardson constant was found to be as 115.42 A/cm(2) K-2 using the modified Richardson plot. In addition, series resistance R-s was obtained using Cheung's function. Finally, the interface state densities D-it were determined by using the forward bias I-V results.


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In this study, a chiral metamaterial sensor applications are created by placing asymmetrically two meander line front and back side of the substrate layer. Characterization of the dielectric constant, thickness and loss tangent have been performed both in simulation and experimental methods. Different Arlon type materials used for showing the effects of dielectric constant on transmission coefficient. Obtained bandwidths for characterization are greater than the similar studies which verifyies increased sen...
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In this study, temperature-dependent current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements are carried out for the electrical characterization of a zinc oxide (ZnO) thin film-based diode. The sandwich structure in the form of Ag/ZnO/Si/Al is investigated at temperatures between 220 and 360 K and in the frequency region of 1 kHz-1 MHz. ZnO thin film layer is deposited on a p-Si wafer substrate as a transparent conductive oxide layer by taking in...
Frequency effect on electrical and dielectric characteristics of In/Cu2ZnSnTe4/Si/Ag diode structure
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In this work, the electrical and charge conduction characteristics of a contact structure featuring thermally evaporated MoOx, deposited on n- and p-type crystalline silicon (c-Si), are extensively investigated by room temperature current-voltage (I-V), transmission line measurements (TLM), and temperaturedependent current-voltage measurements (I-V-T). XRD diffraction spectrum shows that the deposited MoOx film exhibits amorphous nature. From TLM measurements, the values of contact resistivity are calculate...
Citation Formats
O. B. Surucu, “Characterization of GZO thin films fabricated by RF magnetron sputtering method and electrical properties of In/GZO/Si/Al diode,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, pp. 19270–19278, 2019, Accessed: 00, 2020. [Online]. Available: