Interface and material properties of wide band gap a-SiCx:H thin films for solar cell applications

Date

2022-01-01

Author

Donercark, Ergi
Sedani, Salar H.
Kabaçelik, Ismail
Salimi, Arghavan
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

145
views

0
downloads

© 2021 Elsevier LtdA thin intrinsic hydrogenated amorphous silicon carbide ((i) a-SiCx:H) layer with a wide band gap attracts attention as an alternative passivation layer instead of intrinsic hydrogenated amorphous silicon ((i) a-Si:H) for heterojunction photovoltaic applications. The optical band gap of (i) a-SiCx:H can be widened up to 2.24eV. An increase in the optical band gap makes this layer appropriate as the window material by reducing the parasitic absorption. However, the deposition regime should be investigated to understand the incorporation of carbon. The influence of several deposition parameters such as precursor gasses flow rates and plasma power density on the (i) a-SiCx:H layers were investigated in optical, electrical, and elemental aspects. Relatively high interface trap densities were detected related to carbon piling up at the interface. An increase in the amount of C in the interface affected the passivation quality and fixed charge density of the layer. The ratio of secondary ion intensities measured by time of flight-secondary ion mass spectroscopy presents general hydrogen filling of possible dangling bonds and the bonding preferentiality between the silicon or carbon atoms. The passivation quality of the (i) a-SiCx:H layer partially enhanced by stack layer deposition of (i) a-Si:H/(i) a-SiCx:H resulting effective lifetime above 100 μs.

Subject Keywords

a-SiCx:H, Interface trap density, Passivation, Silicon heterojunction solar cells, ToF-SIMS Analysis, Wide band gap

URI

https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85119905432&origin=inward
https://hdl.handle.net/11511/97575

Journal

Renewable Energy

DOI

https://doi.org/10.1016/j.renene.2021.11.065

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films ANUTGAN, MUSTAFA; Anutgan, Tamila (Aliyeva); ATILGAN, İSMAİL; Katircioglu, Bayram (2011-07-01) Silicon-rich hydrogenated amorphous silicon nitride (a-SiN(x):H) films were grown by plasma enhanced chemical vapor deposition (PECVD) with different r=NH(3)/SiH(4) gas flow ratios. The optical absorption characteristics were analyzed by Fourier transform infrared (FTIR) and UV-visible transmittance spectroscopies. The recombination properties were investigated via photoluminescence (PL) measurements. As r was increased from 2 to 9, the PL emission color could be adjusted from red to blue with the emission ...
Surface preparation passivation and patterning techniques used in silicon based heterojunction solar cells Dönerçark, Ergi; Turan, Raşit; Department of Physics (2017) For silicon Heterojunction (SHJ) solar cell technology features, a thin intrinsic hydrogenated amorphous silicon (i a-Si:H) layer has inserted between the crystalline silicon and doped amorphous silicon. The state of the art SHJ solar cell structure involves low temperature depositions of a-Si:H layer by means of Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. Recent developments on SHJ solar cells have been focused on increasing the passivation quality of a-Si:H layer and the formation of all ...
Structural and electrical analysis of poly-Ge films fabricated by e-beam evaporation for optoelectronic applications Kabacelik, Ismail; KULAKCI, MUSTAFA; Turan, Raşit (2016-12-01) We have investigated the relationship between structural and electrical properties of Ge thin films deposited on single crystal silicon (100) substrates by electron beam evaporation at room temperature. Post-thermal annealing was applied to obtain poly-crystalline Ge thin films. The structural effects of the annealing temperature and annealing time on the crystallization of Ge films were analyzed using Raman and X-ray diffraction measurements. Raman and X-ray diffraction spectra revealed a structural evolut...
Morphology and Grain Orientation Dependent Localization and Necking in Dual-phase Steels Çakmak, Serhat Onur; Yalçınkaya, Tuncay (2019-01-01) This paper studies the plastic deformation, localization and the necking behavior of polycrystalline dual phase (DP) steels, with different martensite volume fractions, and ferrite orientation distributions, through crystal plasticity finite element method. The grain structure of the full size micron-scale polycrystalline samples is built through Voronoi tesselation and the specimens are deformed under uniaxial loading condition. For the modelling of martensite phase J2 plasticity with isotropic hardening i...
Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) Nogay, G.; Saleh, Z. M.; Ozkol, E.; Toran, R. (2015-06-01) Vertically-aligned nanostructured silicon films are deposited at room temperature on p-type silicon wafers and glass substrates by inductively-coupled, plasma-enhanced chemical vapor deposition (ICPCVD). The nanocrystalline phase is achieved by reducing pressure and increasing RF power. The crystalline volume fraction (X-c) and the size of the nanocrystals increase with decreasing pressure at constant power. Columnar growth of nc-Si:H films is observed by high resolution transmission electron microscopy (HR...

Citation Formats

E. Donercark, S. H. Sedani, I. Kabaçelik, A. Salimi, and R. Turan, “Interface and material properties of wide band gap a-SiCx:H thin films for solar cell applications,” Renewable Energy, vol. 183, pp. 781–790, 2022, Accessed: 00, 2022. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85119905432&origin=inward.