Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD)

Date

2015-06-01

Author

Nogay, G.
Saleh, Z. M.
Ozkol, E.
Toran, R.

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Vertically-aligned nanostructured silicon films are deposited at room temperature on p-type silicon wafers and glass substrates by inductively-coupled, plasma-enhanced chemical vapor deposition (ICPCVD). The nanocrystalline phase is achieved by reducing pressure and increasing RF power. The crystalline volume fraction (X-c) and the size of the nanocrystals increase with decreasing pressure at constant power. Columnar growth of nc-Si:H films is observed by high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM). The films exhibit cauliflower-like structures with high porosity that leads to slow but uniform oxidation after exposure to air at room temperature. Films deposited at low pressures exhibit photoluminescence (PL) signals that may be deconvoluted into three distinct Gaussian components: 760-810,920-935, and 990-1000nm attributable to the quantum confinement and interface defect states. Hydrogen dilution is manifested in significant enhancement of the PL, but it has little effect on the nanocrystal size and X-c.

Subject Keywords

Nanostructured silicon, Inductively coupled plasma, Photoluminescence, Quantum confinement

URI

https://hdl.handle.net/11511/67830

Journal

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

DOI

https://doi.org/10.1016/j.mseb.2015.02.013

Collections

Department of Physics, Article

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Citation Formats

G. Nogay, Z. M. Saleh, E. Ozkol, and R. Toran, “Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD),” MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, pp. 28–34, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67830.