Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD)

2015-06-01
Nogay, G.
Saleh, Z. M.
Ozkol, E.
Toran, R.
Vertically-aligned nanostructured silicon films are deposited at room temperature on p-type silicon wafers and glass substrates by inductively-coupled, plasma-enhanced chemical vapor deposition (ICPCVD). The nanocrystalline phase is achieved by reducing pressure and increasing RF power. The crystalline volume fraction (X-c) and the size of the nanocrystals increase with decreasing pressure at constant power. Columnar growth of nc-Si:H films is observed by high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM). The films exhibit cauliflower-like structures with high porosity that leads to slow but uniform oxidation after exposure to air at room temperature. Films deposited at low pressures exhibit photoluminescence (PL) signals that may be deconvoluted into three distinct Gaussian components: 760-810,920-935, and 990-1000nm attributable to the quantum confinement and interface defect states. Hydrogen dilution is manifested in significant enhancement of the PL, but it has little effect on the nanocrystal size and X-c.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

Suggestions

Structural peculiarities and aging effect in hydrogenated a-Si prepared by inductively coupled plasma assisted chemical vapor deposition technique
Nogay, G.; Ozkol, E.; Ilday, S.; Turan, Raşit (2014-12-01)
In this study, we report the morphological and structural properties of amorphous and nanocrystalline Si thin films deposited by inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD) technique at low substrate temperatures using H-2 diluted SiH4 as the source gas. We demonstrated that changing the total deposition pressure across a broad range alters the film properties. The film grew in a columnar fashion, and its topography was rough at nanoscale as identified by high resolution Transmis...
Stepped-etching for preserving critical dimensions in through-wafer deep reactive ion etching of thick silicon
Alper, Said Emre; Aydemir, A.; Akın, Tayfun (2009-06-25)
This paper presents the experimental investigation of stepped deep reactive ion etching (DRIE) process in order to minimize critical-dimension (CD) variations due to local heating observed in through-wafer etch of 100 mum-thick, high aspect ratio silicon microstructures that are suspended over glass substrate. Classical methods of cooling the substrate, using a heat-sink layer, or increasing the thickness of sidewall passivation in general turns out to be insufficient for preventing excessive damage in crit...
Optical characterization of silicon based hydrogenated amorphous thin films by un-visible and infrared measurements
Kılıç, İlker; Katırcıoğlu, Bayram; Department of Physics (2006)
Various carbon content hydrogenated amorphous silicon carbide (a-Si1ŁxCx:H) and hydrogenated amorphous silicon (a-Si:H) thin films have been deposited on various substrates by using plasma enhanced chemical vapour deposition (PECVD) technique. Transmission spectra of these films have been determined within UV-Visible region and the obtained data were analysed to find related physical constants such as; refractive indices, thicknesses, etc. Fourier transform infrared (FT-IR) spectrometry technique has been u...
Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure
Ozdemir, O; Atilgan, I; Akaoglu, B; Sel, K; Katircioglu, B (Elsevier BV, 2006-02-21)
A slightly carbon rich hydrogenated amorphous silicon carbide (a-SiCx:H) film was deposited by 13.56 MHz plasma enhanced chemical vapor deposition technique on p-type silicon (p-Si) wafer. Admittance analyses of the metal-insulator-semiconductor device (Al/a-SiCx:H/p-Si)from strong accumulation to strong inversion gate bias were achieved within a widespread frequency range (10(1)-10(6) Hz). An adequate equivalent circuit for each bias regime was proposed. The dependence of the ac conductivity both under str...
Electroforming of Amorphous Silicon Nitride Heterojunction pin Visible Light Emitter
ANUTGAN, MUSTAFA; ANUTGAN, TAMİLA; ATILGAN, İSMAİL; Katircioglu, Bayram (2011-08-01)
The deposition parameters of doped hydrogenated nanocrystalline silicon grown by plasma-enhanced chemical vapor deposition were scanned to obtain highly conductive films. The optimized p(+) and n(+) nc-Si: H films were used as injecting layers in the fabrication of Si-rich hydrogenated amorphous silicon nitride (a-SiN(x) : H)-based heterojunction p(+) in(+) diode. The as-grown diode was subjected to a Joule-heating-assisted forming process (FP) via the application of a high electric field. The modifications...
Citation Formats
G. Nogay, Z. M. Saleh, E. Ozkol, and R. Toran, “Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD),” MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, pp. 28–34, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67830.