Structural and electrical analysis of poly-Ge films fabricated by e-beam evaporation for optoelectronic applications

Kabacelik, Ismail
Turan, Raşit
We have investigated the relationship between structural and electrical properties of Ge thin films deposited on single crystal silicon (100) substrates by electron beam evaporation at room temperature. Post-thermal annealing was applied to obtain poly-crystalline Ge thin films. The structural effects of the annealing temperature and annealing time on the crystallization of Ge films were analyzed using Raman and X-ray diffraction measurements. Raman and X-ray diffraction spectra revealed a structural evolution from amorphous to crystalline phase with increasing annealing temperature and annealing time. It was found that high quality poly-crystalline Ge films were obtained with crystallization ratio of 90% at an annealing temperarure of 500 degrees C following the crystallization threshold of 450 degrees C. Effects of structural ordering on the electrical properties were investigated through current-voltage characteristics of fabricated heterostructure devices (Ge/p-Si). Smooth cathode-anode interchange in the diode behavior has been clearly observed following the structural ordering as a function of annealing temperature in a systematic way. These outcomes could be exploited for engineering of low-cost Ge based novel electronic and opto-electronic devices.


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Kabacelik, Ismail; KULAKCI, MUSTAFA; Turan, Raşit (2015-06-01)
Silver-induced crystallizations of amorphous germanium (alpha-Ge) thin films were fabricated through electron beam evaporation on crystalline silicon (c-Si) (100), aluminum-doped zinc oxide (AZO), and glass substrates at room temperature. The solid-phase crystallization (SPC) of alpha-Ge films was investigated for various post-annealing temperatures between 300 and 500 degrees C for 60 min. Two crystallization approaches were compared: SPC and metal-induced crystallization (MIC). The structural properties o...
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IŞIK, MEHMET; Güllü, Hasan Hüseyin (2014-05-30)
In this paper, structural and optical properties of Ga-In-Se (GIS) thin films deposited by thermal evaporation technique have been investigated. The effect of annealing was also studied for samples annealed at temperatures between 300 degrees C and 500 degrees C. X-ray diffraction, energy dispersive X-ray analysis and scanning electron microscopy have been used for structural characterization. It was reported that increase of annealing temperature results with better crystallization and chemical composition...
Crystallization of amorphous Ge thin films by nanosecond pulsed infrared laser
Korkut, Ceren; Bek, Alpan; Çınar, Kamil; Department of Physics (2023-1-20)
Crystalline semiconductors have superior optical and electrical properties to an amorphous structure; therefore, they are an essential part of photovoltaic applications. Pulsed laser irradiation is a cost-effective technique for the growth of polycrystalline germanium (pc-Ge). Laser processing also enables the production of local and wide-ranging nano-crystalline surface structures. Germanium has high carrier mobility, and Ge nanocrystals and microcrystals have a great potential in optoelectronics applicati...
Mechanical and optical properties of SiO2 thin films deposited on glass
Simurka, Lukas; Ctvrtlik, Radim; Tomastik, Jan; Bektaş, Gence; Svoboda, Jan; Bange, Klaus (2018-09-01)
The optical and mechanical properties of amorphous SiO2 films deposited on soda-lime silicate float glass by reactive RF magnetron sputtering at room temperature were investigated in dependence of the process pressure. The densities of the films are strongly influenced by the process pressure and vary between 2.38 and 1.91 g cm(-3) as the pressure changes from 0.27 to 1.33 Pa. The refractive indices of the films shift between 1.52 and 1.37, while the residual compressive stresses in the deposited films vary...
Structural characteristics of thermally evaporated Cu0.5Ag0.5InSe2 thin films
Gullu, H. H.; Parlak, Mehmet (2016-05-01)
In this work, Cu0.5Ag0.5InSe2 (CAIS) thin film samples were prepared by thermal evaporation of Cu, Ag, InSe and Se evaporants sequentially on glass substrates. Following the deposition, annealing processes were applied at different temperatures. The as-grown and annealed CAIS samples were nearly stoichiometric in the detection limit of the compositional measurement. The x-ray diffraction (XRD) measurements revealed that they were in polycrystalline structure with a preferred orientation along the (112) dire...
Citation Formats
I. Kabacelik, M. KULAKCI, and R. Turan, “Structural and electrical analysis of poly-Ge films fabricated by e-beam evaporation for optoelectronic applications,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, pp. 368–372, 2016, Accessed: 00, 2020. [Online]. Available: