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Structural and electrical analysis of poly-Ge films fabricated by e-beam evaporation for optoelectronic applications
Date
2016-12-01
Author
Kabacelik, Ismail
KULAKCI, MUSTAFA
Turan, Raşit
Metadata
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This work is licensed under a
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We have investigated the relationship between structural and electrical properties of Ge thin films deposited on single crystal silicon (100) substrates by electron beam evaporation at room temperature. Post-thermal annealing was applied to obtain poly-crystalline Ge thin films. The structural effects of the annealing temperature and annealing time on the crystallization of Ge films were analyzed using Raman and X-ray diffraction measurements. Raman and X-ray diffraction spectra revealed a structural evolution from amorphous to crystalline phase with increasing annealing temperature and annealing time. It was found that high quality poly-crystalline Ge films were obtained with crystallization ratio of 90% at an annealing temperarure of 500 degrees C following the crystallization threshold of 450 degrees C. Effects of structural ordering on the electrical properties were investigated through current-voltage characteristics of fabricated heterostructure devices (Ge/p-Si). Smooth cathode-anode interchange in the diode behavior has been clearly observed following the structural ordering as a function of annealing temperature in a systematic way. These outcomes could be exploited for engineering of low-cost Ge based novel electronic and opto-electronic devices.
Subject Keywords
Germanium thin film
,
Solid phase crystallization
,
Ge/Si heterojunction
,
Current-voltage
URI
https://hdl.handle.net/11511/43674
Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
DOI
https://doi.org/10.1016/j.mssp.2016.09.023
Collections
Department of Physics, Article