Structural and electrical analysis of poly-Ge films fabricated by e-beam evaporation for optoelectronic applications

2016-12-01
Kabacelik, Ismail
KULAKCI, MUSTAFA
Turan, Raşit
We have investigated the relationship between structural and electrical properties of Ge thin films deposited on single crystal silicon (100) substrates by electron beam evaporation at room temperature. Post-thermal annealing was applied to obtain poly-crystalline Ge thin films. The structural effects of the annealing temperature and annealing time on the crystallization of Ge films were analyzed using Raman and X-ray diffraction measurements. Raman and X-ray diffraction spectra revealed a structural evolution from amorphous to crystalline phase with increasing annealing temperature and annealing time. It was found that high quality poly-crystalline Ge films were obtained with crystallization ratio of 90% at an annealing temperarure of 500 degrees C following the crystallization threshold of 450 degrees C. Effects of structural ordering on the electrical properties were investigated through current-voltage characteristics of fabricated heterostructure devices (Ge/p-Si). Smooth cathode-anode interchange in the diode behavior has been clearly observed following the structural ordering as a function of annealing temperature in a systematic way. These outcomes could be exploited for engineering of low-cost Ge based novel electronic and opto-electronic devices.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Suggestions

Investigation of silver-induced crystallization of germanium thin films fabricated on different substrates
Kabacelik, Ismail; KULAKCI, MUSTAFA; Turan, Raşit (2015-06-01)
Silver-induced crystallizations of amorphous germanium (alpha-Ge) thin films were fabricated through electron beam evaporation on crystalline silicon (c-Si) (100), aluminum-doped zinc oxide (AZO), and glass substrates at room temperature. The solid-phase crystallization (SPC) of alpha-Ge films was investigated for various post-annealing temperatures between 300 and 500 degrees C for 60 min. Two crystallization approaches were compared: SPC and metal-induced crystallization (MIC). The structural properties o...
Structural and optical properties of thermally evaporated Ga-In-Se thin films
IŞIK, MEHMET; Güllü, Hasan Hüseyin (2014-05-30)
In this paper, structural and optical properties of Ga-In-Se (GIS) thin films deposited by thermal evaporation technique have been investigated. The effect of annealing was also studied for samples annealed at temperatures between 300 degrees C and 500 degrees C. X-ray diffraction, energy dispersive X-ray analysis and scanning electron microscopy have been used for structural characterization. It was reported that increase of annealing temperature results with better crystallization and chemical composition...
Structural and optical properties of thermally annealed thallium indium disulfide thin films
Guler, I; Hasanlı, Nızamı (Elsevier BV, 2020-06-30)
Structural and optical properties of thallium indium disulfide (TlInS2) thin films, deposited by thermal evaporation technique and thermally annealed at different temperatures, were analyzed. Crystallite size, dislocation density and lattice strain of the thin films were found from X-ray diffraction experiments. The atomic compositions of the films were determined from energy dispersive spectroscopy analysis. Surface morphology of the films was analyzed using atomic force microscopy. From room temperature t...
Structural and optical properties of thermally evaporated Cu-Ga-S (CGS) thin films
Gullu, H. H.; IŞIK, MEHMET; Hasanlı, Nızamı (2018-10-15)
The structural and optical properties of thermally evaporated Cu-Ga-S (CGS) thin films were investigated by Xray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM) and optical transmittance measurements. The effect of annealing temperature on the results of applied techniques was also studied in the present paper. EDS results revealed that each of the elements, Cu, Ga and S are presented in the films and Cu and Ga concentration increases whereas S concentration decr...
Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique
KARAAĞAÇ, HAKAN; Parlak, Mehmet; KARABULUT, ORHAN; SERİNCAN, UĞUR; Turan, Raşit; Akinoglu, B. G. (Wiley, 2006-12-01)
Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied by means of X-Ray Diffraction (XRD), temperature dependent conductivity and photoconductivity (PC) measurements for different annealing temperatures. It was observed that upon implanting GaSe with Ge and applying annealing process, the resistivity is reduced from 2.1x10(9) to 6.5x10(5) ohm-em. From the temperature dependent conductivities, the activation energies have been found to be 4, 34, and 314 meV for a...
Citation Formats
I. Kabacelik, M. KULAKCI, and R. Turan, “Structural and electrical analysis of poly-Ge films fabricated by e-beam evaporation for optoelectronic applications,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, pp. 368–372, 2016, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/43674.