Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Production of High-Performance CdZnTe Crystals Grown by THM for Radiation Detection Applications
Date
2022-01-01
Author
Ünal, Mustafa
Balbaşı, Özden Başar
Karaman, Mehmet Can
Genç, Ayşe Merve
Parlak, Mehmet
Turan, Raşit
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
355
views
0
downloads
Cite This
© 2022, The Minerals, Metals & Materials Society.CdZnTe crystals are the perfect candidate to be used in room temperature x-ray and gamma-ray detection systems. Production of detector-grade crystals, on the other hand, is challenging due to the unique properties of the CdZnTe. CdZnTe crystals are soft-brittle materials and have high ionicity of bonds that makes the growth process challenging. Among several growth techniques, the travelling heater method (THM) is a preferred growth method to obtain high-quality crystals with high yield thanks to low segregation of Zn and usage of the seed crystal. In this paper, the production of high-quality CdZnTe crystals is presented. Growth, surface preparation, and contact deposition steps are summarized. CdZnTe crystals with resistivity around 6.1 × 109 Ω cm, mobility-lifetime product around 6.7 × 10−3 cm2/V, and leakage current as low as 2 nA at 200 V bias voltage are obtained, which is compatible with commercially available CdZnTe crystals.
Subject Keywords
CdZnTe crystals
,
Crystal growth
,
electrode deposition
,
gamma-ray detectors
,
THM growth
URI
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85130065463&origin=inward
https://hdl.handle.net/11511/97597
Journal
Journal of Electronic Materials
DOI
https://doi.org/10.1007/s11664-022-09663-y
Collections
Center for Solar Energy Research and Applications (GÜNAM), Article
Suggestions
OpenMETU
Core
CdZnTe Bulk Crystal Growth and Temperature Modeling Studies at METU-CGL
Balbaşı, Özden Başar; DOĞRU, ÇİĞDEM; Kabukcuoglu, Merve; Ünal, Mustafa; Parlak, Mehmet; Turan, Raşit (2018-08-21)
Cadmium Zinc Telluride (Cd1-xZnxTe) has become a crucial material for X-ray and gamma ray detection due to its wide band-gap, high atomic number and high density, which offer high efficiency and sharp spectroscopic resolution at room temperature. In addition, due to being lattice matched, it can also be used as substrate for the epitaxial growth of HgCdTe that can be used for infrared detection with high resolution. Hence, increasing the single crystal yield of CdZnTe from the grown ingot gained importance ...
Investigation of physical properties of quaternary AgGa0.5In0.5Te2 thin films deposited by thermal evaporation
Karaagac, H.; Parlak, Mehmet (Elsevier BV, 2010-8)
The aim of this study is to understand the structural, optical and photo-electrical properties of the quaternary chalcogenide AgGa 0.5In0.5Te2 thin films deposited onto the glass substrates by thermal evaporation of the single crystalline powder. Energy dispersive X-ray analysis (EDXA) showed remarkable change in atomic percentage of the constituent elements after annealing. The X-ray diffraction (XRD) of the films below the annealing temperature of 300°C indicated the polycrystalline structure with co-exis...
Hopping conduction in Ga4Se3S layered single crystals
Qasrawi, A.F.; Hasanlı, Nızamı (Elsevier BV, 2008-11)
The conduction mechanism in Ga4Se3S single crystals has been investigated by means of dark and illuminated conductivity measurements for the first time. The temperature-dependent electrical conductivity analysis in the region of 100-350 K, revealed the dominance of the thermionic emission and the thermally assisted variable range hopping (VRH) of charged carriers above and below 170 K, respectively. The density of states near the Fermi level and the average hopping distance for this crystal in the dark were...
Temperature-tuned band gap energy and oscillator parameters of TlInSeS layered single crystals
Hasanlı, Nızamı; Güler, Işıkhan (2008-09-10)
The parameters of monoclinic unit cell of TlInSeS layered crystals were determined from X-ray powder diffraction study. The optical properties of TlInSeS have been investigated by means of transmission and reflection measurements in the wavelength range of 500-1100 nm. The optical indirect transitions with band gap energy of 2.05 eV and direct transitions with band gap energy of 2.21 eV were found by means of the analysis of the absorption data at room temperature. Transmission measurements carried out in t...
Characteristics of nanoscale composites by terahertz spectroscopy
Altan, Hakan; Federici, John F; Lan, Aidong; Grebel, Haim (2003-07-29)
We have conducted visible pump-THz probe experiments on single wall carbon nanotubes (SWCNTs) on quartz substrates. Our results suggest an upper limit to the carrier-lifetime, which is on the order 1.5ps, limited only by the THz pulse duration. These experiments were repeated for ion-implanted, 3-4nm Si nanoclusters in quartz for which the carrier lifetime was also assessed at 1.5ps. THz time-domain spectroscopy (THz-TDS) of SWCNTs revealed that the THz pulse peak transmission changed under optical illumina...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
M. Ünal, Ö. B. Balbaşı, M. C. Karaman, A. M. Genç, M. Parlak, and R. Turan, “Production of High-Performance CdZnTe Crystals Grown by THM for Radiation Detection Applications,”
Journal of Electronic Materials
, pp. 0–0, 2022, Accessed: 00, 2022. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85130065463&origin=inward.