Ion Implanted Homojunction Crystalline Silicon Solar Cells

Bektaş, Gence
Process simplification is one of the requirements to reduce the workload and cost of solar cell manufacturing, especially for complex designs. In particular, the application of the ion implantation method in patterned and single side doping processes, which are the bottlenecks of the diffusion method, brings many conveniences in cell production. Flexibility in the selection of masking material during doping is another important factor that makes the ion implantation method attractive. Moreover, by varying the parameters of the ion implantation and a subsequent annealing process the desired profile can be formed for both p and n doping in silicon (Si) wafers to form an emitter and back surface field. In this thesis, we investigate the ion implantation along with the subsequent activation processes and apply them to the fabrication of various Si solar cells such as passivated emitter and rear contact (PERC), passivated emitter and rear totally diffused (PERT), and interdigitated back contact (IBC). In this context, we take advantage of its capability for single side doping, which eliminates additional processes such as single side etching or deposition and removal of a mask layer in the fabrication of PERC and PERT solar cells. In addition, we demonstrate an easy-to-apply IBC process flow with the use of hard masks in the ion implantation process for patterned doping, which is very complex for the diffusion method. Furthermore, ion implantation can be used together with the diffusion method in the manufacturing of solar cells with high efficiency and simplified process flow. By applying the optimized and simple manufacturing methods, we achieve 20.25%, 20.54% and 15.60% efficiencies for PERC, PERT and IBC solar cells, respectively.


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Citation Formats
G. Bektaş, “Ion Implanted Homojunction Crystalline Silicon Solar Cells,” Ph.D. - Doctoral Program, Middle East Technical University, 2022.