Ion Implanted Homojunction Crystalline Silicon Solar Cells

Download

gencebektas-phd thesis.pdf

Date

2022-6-22

Author

Bektaş, Gence

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

320
views

109
downloads

Process simplification is one of the requirements to reduce the workload and cost of solar cell manufacturing, especially for complex designs. In particular, the application of the ion implantation method in patterned and single side doping processes, which are the bottlenecks of the diffusion method, brings many conveniences in cell production. Flexibility in the selection of masking material during doping is another important factor that makes the ion implantation method attractive. Moreover, by varying the parameters of the ion implantation and a subsequent annealing process the desired profile can be formed for both p and n doping in silicon (Si) wafers to form an emitter and back surface field. In this thesis, we investigate the ion implantation along with the subsequent activation processes and apply them to the fabrication of various Si solar cells such as passivated emitter and rear contact (PERC), passivated emitter and rear totally diffused (PERT), and interdigitated back contact (IBC). In this context, we take advantage of its capability for single side doping, which eliminates additional processes such as single side etching or deposition and removal of a mask layer in the fabrication of PERC and PERT solar cells. In addition, we demonstrate an easy-to-apply IBC process flow with the use of hard masks in the ion implantation process for patterned doping, which is very complex for the diffusion method. Furthermore, ion implantation can be used together with the diffusion method in the manufacturing of solar cells with high efficiency and simplified process flow. By applying the optimized and simple manufacturing methods, we achieve 20.25%, 20.54% and 15.60% efficiencies for PERC, PERT and IBC solar cells, respectively.

Subject Keywords

Ion-implantation, silicon solar cell, PERC, PERT, IBC

URI

https://hdl.handle.net/11511/98599

Collections

Graduate School of Natural and Applied Sciences, Thesis

Suggestions

OpenMETU
Core

Nanostructure enhanced photovoltaic devices Aurang, Pantea; Ünalan, Hüsnü Emrah; Turan, Raşit; Department of Micro and Nanotechnology (2015) There are mainly three generations of solar cells that have been categorized by considering their efficiency and manufacturing cost. Although lots of investigations and research is going on in this field, but the first generation solar cells are most commercially available solar cells. First generation solar cells consist of single and multi-crystalline silicon (Si), which has been doped typically by phosphorus and boron in a p-n junction configuration. Si is non-toxic, relatively low cost and naturally abu...
Angular Dependence of Solar Cell Parameters in Crystalline Silicon Solar Cells Textured with Periodic Array of Microholes Altinoluk, Serra; Kumar, Naveen; Çiftpınar, Emine Hande; Demircioglu, O.; Turan, Raşit; Vasileska, Dragica (2020-09-01) Surface texturing is an indispensable way of increasing absorption in solar cells. In order to properly characterize the effect of texturing, the angular dependence of the incidence light should be addressed. This is particularly important when the actual application where the incidence angle of the sunlight varies during the day is considered. This study presents the angular dependence of solar cell parameters in the case of periodically textured crystalline silicon (c-Si) solar cells with microholes. A st...
Selective emitter formation via single step doping through laser patterned mask oxide layer for monocrystalline silicon solar cells Çiftpınar, Emine Hande; Turan, Raşit; Department of Physics (2014) Selective emitter is one of the new approaches for higher efficiency solar cells. Although selective emitter cells could be processed by several different methods such as; etch back process, laser doping, ion implantation, doping paste, a different method based on diffusion through a laser patterned oxide layer was studied in this thesis. Utilization of pattern oxide layer as a diffusion barrier enables to obtain selective emitter profile via single step doping which reduces overall production cost and time...
Analysis of boron doped hydrogenated amorphous silicon carbide thin film for silicon heterojunction solar cells Salimi, Arghavan; Turan, Raşit; Department of Micro and Nanotechnology (2019) Silicon based solar cells are the dominant type of solar cells in the photovoltaic industry. Recently, there have been increasing efforts to develop c-Si solar cells with higher efficiency and lower cost. Among them, silicon heterojunction solar cell (SHJ) is attracting much attention because of its superior performance values demonstrated at both R&D and industrial levels. One of the common limiting criteria is the recombination at the front side which can be solved by providing proper passivation at the f...
Poly(triphenylamine-thiazolo[5,4-D]Thiazole) copolymers dye for bulk heterojunction organic solar cells Çırpan, Ali; Gülfen, Mustafa; Uğurlu, Çiğden; Hızalan, Gönül; Toppare, Levent Kamil (2018-07-06) The polymer-based solar cells (PSCs) are promising due to their simple fabrication procedure, low material cost and flexibility. In recent years, PSCs based on the conjugated polymers as the electron donor materials blended with [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) have been investigated extensively using a single bulk heterojunction (BHJ) device structure. The semiconductivity and solar cell material properties of thiazolo[5,4- d]thiazoles have been investigated previously [1,2]. In the pres...

Citation Formats

G. Bektaş, “Ion Implanted Homojunction Crystalline Silicon Solar Cells,” Ph.D. - Doctoral Program, Middle East Technical University, 2022.