Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Components of detector response function : experiment and monte carlo simulations
Download
index.pdf
Date
2004
Author
Peköz, Rengin
Metadata
Show full item record
Item Usage Stats
205
views
63
downloads
Cite This
Components of the response function of a high-purity germanium (HPGe) detector due to full or partial energy deposition by gamma- and X-rays were studied. Experimental response functions for 241Am, Ba and Tb were compared with those obtained from the Monte Carlo simulations. The role of physical mechanisms for each component was investigated by considering escape/absorption of photons, photoelectrons, Auger electrons, recoil electrons and X-rays of the detector material. A detailed comparison of the experimental Compton, photoelectron, detector X-ray escape components and full-energy peaks with those obtained from Monte Carlo program are presented.
Subject Keywords
Atomic physics.
URI
http://etd.lib.metu.edu.tr/upload/12605228/index.pdf
https://hdl.handle.net/11511/14292
Collections
Graduate School of Natural and Applied Sciences, Thesis
Suggestions
OpenMETU
Core
Physical properties of Pd, Ni metals and their binary alloys
Özdemir Kart, Sevgi; Tomak, Mehmet; Department of Physics (2004)
The Sutton Chen and quantum Sutton Chen potentials are used in molecular dynamics simulations to describe the structural, thermodynamical, and transport properties of Pd, Ni and their binary alloys in solid, liquid, and glass phases. Static properties including elastic constants, pair distribution function, static structure factor, and dynamical properties consisting of phonon dispersion relation, diffusion coefficient, and viscosity are computed at various temperatures. The melting temperatures for Pd-Ni s...
Energy bands of tise and tlınse2 in tight binding model
Yıldırım, Özlem; Ellialtıoğlu, Süleyman Şinasi; Department of Physics (2005)
The electronical and structural properties of TlSe-type chain-like crystals are the main topic of this study. A computational method which is Tight Binding method is introduced and used to obtain the electronic band structure of TlSe and TlInSe2 . For both materials the partial and total density of states are calculated. The results are compared with the other theoretical results.
Dispersive optical constants of Tl2InGaSe4 single crystals
Qasrawi, A. F.; Hasanlı, Nızamı (IOP Publishing, 2007-09-01)
The structural and optical properties of Bridgman method grown Tl2InGaSe4 crystals have been investigated by means of room temperature x-ray diffraction, and transmittance and reflectance spectral analysis, respectively. The x-ray diffraction technique has shown that Tl2InGaSe4 is a single phase crystal of a monoclinic unit cell that exhibits the lattice parameters of a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees . The optical data have revealed an indirect allowed transition band ...
Components of detector response function: Monte Carlo simulations and experiment
Pekoz, Rengin; Can, Cüneyt (Wiley, 2006-11-01)
Components of the response function of an HPGe detector for 32 keV incident photons (Ba K alpha x-rays) were studied using a Monte Carlo program. Physical mechanisms and the role of incident photons, detector x-rays, photoelectrons and Compton recoil and Auger electrons for each component were investigated. The position, intensity and shape of the components, particularly of the photoelectrons, were studied in detail. Two distinct components for photoelectron escape were identified by considering the fate o...
Optoelectronic properties of Ga(4)Se(3)S-layered single crystals
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı; Ilaiwi, K. F. (IOP Publishing, 2008-07-01)
The optoelectronic properties of Bridgman method-grown Ga(4)Se(3)S single crystals have been investigated by means of room temperature electrical resistivity, temperature-dependent photosensitivity and temperature-dependent optical absorption. The photosensitivity was observed to increase with decreasing temperature, the illumination dependence of which was found to exhibit monomolecular recombination in the bulk at 300 K. The absorption coefficient, which was calculated in the incident photon energy range ...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
R. Peköz, “Components of detector response function : experiment and monte carlo simulations,” M.S. - Master of Science, Middle East Technical University, 2004.