Ellipsometric and uv-vis transmittance analysis of amorphous silicon carbide thin films

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2004

Author

Gülses, Ali Alkan

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The fundamentals of the ellipsometry are reviewed in order to point out the strengths and weaknesses of the ellipsometric measurements. The effects of the surface conditions (such as degree of cleanliness, contaminated thin layer, roughness etc_) on the ellipsometric variables are experimentally studied; the optimum procedures have been determined. Hydrogenated amorphous silicon carbide (a-Si1-xCx:H) thin films are produced by plasma enhanced chemical vapor deposition (PECVD) technique with a circular reactor, in a way that RF power and carbon contents are taken as variables. These samples are analyzed using multiple angle of incidence ellipsometer and uv-vis spectrometer. These measurements have inhomogeneities in optical constants, such as thicknesses, refractive indices and optical energy gaps along the radial direction of the reactor electrode for different power and carbon contents.

Subject Keywords

Physics.

URI

http://etd.lib.metu.edu.tr/upload/12605589/index.pdf
https://hdl.handle.net/11511/14853

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Graduate School of Natural and Applied Sciences, Thesis

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Citation Formats

A. A. Gülses, “Ellipsometric and uv-vis transmittance analysis of amorphous silicon carbide thin films,” M.S. - Master of Science, Middle East Technical University, 2004.