Show/Hide Menu
Hide/Show Apps
anonymousUser
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Frequently Asked Questions
Frequently Asked Questions
Communities & Collections
Communities & Collections
Ellipsometric and uv-vis transmittance analysis of amorphous silicon carbide thin films
Download
index.pdf
Date
2004
Author
Gülses, Ali Alkan
Metadata
Show full item record
Item Usage Stats
2
views
1
downloads
The fundamentals of the ellipsometry are reviewed in order to point out the strengths and weaknesses of the ellipsometric measurements. The effects of the surface conditions (such as degree of cleanliness, contaminated thin layer, roughness etc_) on the ellipsometric variables are experimentally studied; the optimum procedures have been determined. Hydrogenated amorphous silicon carbide (a-Si1-xCx:H) thin films are produced by plasma enhanced chemical vapor deposition (PECVD) technique with a circular reactor, in a way that RF power and carbon contents are taken as variables. These samples are analyzed using multiple angle of incidence ellipsometer and uv-vis spectrometer. These measurements have inhomogeneities in optical constants, such as thicknesses, refractive indices and optical energy gaps along the radial direction of the reactor electrode for different power and carbon contents.
Subject Keywords
Physics.
URI
http://etd.lib.metu.edu.tr/upload/12605589/index.pdf
https://hdl.handle.net/11511/14853
Collections
Graduate School of Natural and Applied Sciences, Thesis