Millimeter wave gunn diode oscillators

Download
2007
Lüy, Ülkü
This thesis presents the design and implementation of a millimeter-wave Gunn diode oscillator operating at 35 GHz (Ka (R) 26.5-40 GHz Band). The aim of the study is to produce a high frequency, high power signal from a negative resistance device situated in a waveguide cavity by applying a direct current bias. First the physics of Gunn diodes is studied and the requirements that Gunn diode operates within the negative differential resistance region is obtained. Then the best design configuration is selected. The design of the oscillator includes the design of the waveguide housing, diode mounting and the bias insertion network. Some simulation tools are used to predict, approximately, the behaviour of the oscillator and the bias coupling circuit. For tuning purposes, a sliding backshort and a triplescrew- tuner system is used. For different bias values and different positions of the tuning elements oscillations are observed. A much more stable and higher magnitude oscillations were obtained with the inclusion of “resonant disc” placed on top of the diode. 15 dBm power was measured at a frequency of 28 GHz. Laboratory measurements have been carried out to determine the oscillator frequency, power output and stability for different bias conditions.

Suggestions

High performance readout electronics for uncooled infrared detector arrays
Yıldırım, Ömer Özgür; Akın, Tayfun; Department of Electrical and Electronics Engineering (2006)
This thesis reports the development of high performance readout electronics for resistive microbolometer detector arrays that are used for uncooled infrared imaging. Three different readout chips are designed and fabricated by using a standard 0.6 m CMOS process. Fabricated chips include a conventional capacitive transimpedance amplifier (CTIA) type readout circuit, a novel readout circuit with dynamic resistance nonuniformity compensation capability, and a new improved version of the CTIA circuit. The fabr...
Reliability improvement of RF MEMS devices based on lifetime measurements
Gürbüz, Ozan Doğan; Demir, Şimşek; Akın, Tayfun; Department of Electrical and Electronics Engineering (2010)
This thesis presents fabrication of shunt, capacitive contact type RF MEMS switches which are designed according to given mm-wave performance specifications. The designed switches are modified for investigation in terms of reliability and lifetime. To observe the real-time performance of switches a time domain measurement setup is established and a CV (capacitance vs. voltage) curve measurement system is also included to measure CV curves, pull-in and hold-down voltages and the shifts of these due to actuat...
Development of electrochemical etch-stop techniques for integrated MEMS sensors
Yaşınok, Gözde Ceren; Akın, Tayfun; Department of Electrical and Electronics Engineering (2006)
This thesis presents the development of electrochemical etch-stop techniques (ECES) to achieve high precision 3-dimensional integrated MEMS sensors with wet anisotropic etching by applying proper voltages to various regions in silicon. The anisotropic etchant is selected as tetra methyl ammonium hydroxide, TMAH, considering its high silicon etch rate, selectivity towards SiO2, and CMOS compatibility, especially during front-side etching of the chip/wafer. A number of parameters affecting the etching are inv...
A low-cost uncooled infrared detector array and its camera electronics
Akçören, Dinçay; Akın, Tayfun; Eminoğlu, Selim; Department of Electrical and Electronics Engineering (2011)
This thesis presents the development of integrated readout electronics for diode type microbolometers and development of external camera electronics for microbolometers. The developed readout electronics are fabricated with its integrated 160x120 resolution FPA (Focal Plane Array) in the XFAB SOI-CMOS 1.0 μm process. The pixels in the FPA have 70 μm pixel pitch, and they are sensitive in the 8–12 μm band of the infrared spectrum. Each pixel has 4 serially connected diodes, and diode turn on voltage changes ...
High performance CMOS capacitive interface circuits for MEMS gyroscopes
Silay, Kanber Mithat; Akar, Tayfun; Department of Electrical and Electronics Engineering (2006)
This thesis reports the development and analysis of high performance CMOS readout electronics for increasing the performance of MEMS gyroscopes developed at Middle East Technical University (METU). These readout electronics are based on unity gain buffers implemented with source followers. High impedance node biasing problem present in capacitive interfaces is solved with the implementation of a transistor operating in the subthreshold region. A generalized fully differential gyroscope model with force feed...
Citation Formats
Ü. Lüy, “Millimeter wave gunn diode oscillators,” M.S. - Master of Science, Middle East Technical University, 2007.