Reliability improvement of RF MEMS devices based on lifetime measurements

Gürbüz, Ozan Doğan
This thesis presents fabrication of shunt, capacitive contact type RF MEMS switches which are designed according to given mm-wave performance specifications. The designed switches are modified for investigation in terms of reliability and lifetime. To observe the real-time performance of switches a time domain measurement setup is established and a CV (capacitance vs. voltage) curve measurement system is also included to measure CV curves, pull-in and hold-down voltages and the shifts of these due to actuations. By using the established setup reliability and lifetime measurements under different bias waveforms in different environments are performed. After investigation for the most suitable condition for improving lifetime long-term tests are performed and the outstanding result of more than 885 hours of operation under cycling bias waveform is obtained.


Development of electrochemical etch-stop techniques for integrated MEMS sensors
Yaşınok, Gözde Ceren; Akın, Tayfun; Department of Electrical and Electronics Engineering (2006)
This thesis presents the development of electrochemical etch-stop techniques (ECES) to achieve high precision 3-dimensional integrated MEMS sensors with wet anisotropic etching by applying proper voltages to various regions in silicon. The anisotropic etchant is selected as tetra methyl ammonium hydroxide, TMAH, considering its high silicon etch rate, selectivity towards SiO2, and CMOS compatibility, especially during front-side etching of the chip/wafer. A number of parameters affecting the etching are inv...
High performance readout electronics for uncooled infrared detector arrays
Yıldırım, Ömer Özgür; Akın, Tayfun; Department of Electrical and Electronics Engineering (2006)
This thesis reports the development of high performance readout electronics for resistive microbolometer detector arrays that are used for uncooled infrared imaging. Three different readout chips are designed and fabricated by using a standard 0.6 m CMOS process. Fabricated chips include a conventional capacitive transimpedance amplifier (CTIA) type readout circuit, a novel readout circuit with dynamic resistance nonuniformity compensation capability, and a new improved version of the CTIA circuit. The fabr...
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Sunay, Ahmet Sertaç; Birand, Mehmet Tuncay; Department of Electrical and Electronics Engineering (2005)
The Multimode Interference (MMI) mechanism is a powerful toool used in the analysis and design of a certain class of optical, microwave and millimeter wave devices. The principles of the MMI method and the self-imaging principle is described. Using this method, NXM MMI couplers, MMI splitter/combiners are analyzed. Computer simulations for illustrating the "Multimode Interference Mechanism" are carried out. The MMI approach is used to analyze overmoded 'rectangular metallic' and 'dielectric slab' type of wa...
Implementation of a risc microcontroller using fpga
Gümüş, Raşit; Güran, Hasan; Department of Electrical and Electronics Engineering (2005)
In this thesis a microcontroller core is developed in an FPGA. Its instruction set is compatible with the microcontroller PIC16XX series by Microchip Technology. The microcontroller employs a RISC architecture with separate busses for instructions and data. Our goal in this research is to implement and evaluate the design in the FPGA. Increasing performance and gate capacity of recent FPGA devices permits complex logic systems to be implemented on a single programmable device. Such a growing complexity dema...
Zero-level packaging of microwave and millimeterwave MEMS components
Comart, İlker; Demir, Şimşek; Akın, Tayfun; Department of Electrical and Electronics Engineering (2010)
This thesis presents realization of two shunt, capacitive contact RF MEMS switches and two RF MEMS SPDT switches for microwave and millimeter-wave applications, two zero-level package structures for RF MEMS switches and development trials of a BCB based zero level packaging process cycle. Two shunt, capacitive contact RF MEMS switches for 26 GHz and 12 GHz operating frequencies are designed, fabricated and consistencies between fabricated devices and designs are shown through RF measurements. For the switch...
Citation Formats
O. D. Gürbüz, “Reliability improvement of RF MEMS devices based on lifetime measurements,” M.S. - Master of Science, Middle East Technical University, 2010.