Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Development of electrochemical etch-stop techniques for integrated MEMS sensors
Download
index.pdf
Date
2006
Author
Yaşınok, Gözde Ceren
Metadata
Show full item record
Item Usage Stats
337
views
144
downloads
Cite This
This thesis presents the development of electrochemical etch-stop techniques (ECES) to achieve high precision 3-dimensional integrated MEMS sensors with wet anisotropic etching by applying proper voltages to various regions in silicon. The anisotropic etchant is selected as tetra methyl ammonium hydroxide, TMAH, considering its high silicon etch rate, selectivity towards SiO2, and CMOS compatibility, especially during front-side etching of the chip/wafer. A number of parameters affecting the etching are investigated, including the effect of temperature, illumination, and concentration of the etchant over the etch rate of silicon, surface roughness, and biasing voltages. The biasing voltages for passivating the n-well and enhancing the etching reactions on p-substrate are determined as -0.5V and -1.6V, respectively, after a series of current-voltage characteristic experiments. The surface roughness due to TMAH etching is prevented with the addition of ammonium peroxodisulfate, AP. A proper etching process is achieved using a 10wt.% TMAH at 85°C with 10gr/lt. AP. Different silicon etch samples are produced in METU-MET facilities to understand and optimize ECES parameters that can be used for CMOS microbolometers. The etch samples are fabricated using various processes, including thermal oxidation, boron and phosphorus diffusions, aluminum and silicon nitride layer deposition processes. Etching with the prepared samples shows the dependency of the depletion layer between p-substrate and nwell, explaining the reason of the previous failures during post-CMOS etching of CMOS microbolometers from the front side. Succesfully etched CMOS microbolometers are achieved with back side etching in 6M KOH at 90 °C, where 3.5V and 1.5V are applied to the p-substrate and n-well. In summary, this study provides an extensive understanding of the ECES process for successful implementations of integrated MEMS sensors.
Subject Keywords
Electronics.
URI
http://etd.lib.metu.edu.tr/upload/12607538/index.pdf
https://hdl.handle.net/11511/16343
Collections
Graduate School of Natural and Applied Sciences, Thesis
Suggestions
OpenMETU
Core
Design and implementation of microwave lumped components and system integration using MEMS technology
Temoçin, Engin Ufuk; Akın, Tayfun; Department of Electrical and Electronics Engineering (2006)
This thesis presents the design and fabrication of coplanar waveguide to microstrip transitions and planar spiral inductors, and the design of metal-insulator-metal capacitors, a planar band-pass, and a low-pass filter structures as an application for the inductors and capacitors using the RF MEMS technology. This thesis also includes a packaging method for RF MEMS devices with the use of “benzocyclobutene” as bonding material. The transition structures are formed by four different methods between coplanar ...
Design of an electromagnetic classifier for spherical targets
Ayar, Mehmet; Sayan, Gönül; Department of Electrical and Electronics Engineering (2005)
This thesis applies an electromagnetic feature extraction technique to design electromagnetic target classifiers for conductors, dielectrics and dielectric coated conductors using their natural resonance related late-time scattered responses. Classifier databases contain scattered data at only a few aspects for each candidate target. The targets are dielectric spheres of varying sizes and refractive indices, perfectly conducting spheres varying sizes and dielectric coated conducting spheres of varying refra...
High performance readout electronics for uncooled infrared detector arrays
Yıldırım, Ömer Özgür; Akın, Tayfun; Department of Electrical and Electronics Engineering (2006)
This thesis reports the development of high performance readout electronics for resistive microbolometer detector arrays that are used for uncooled infrared imaging. Three different readout chips are designed and fabricated by using a standard 0.6 m CMOS process. Fabricated chips include a conventional capacitive transimpedance amplifier (CTIA) type readout circuit, a novel readout circuit with dynamic resistance nonuniformity compensation capability, and a new improved version of the CTIA circuit. The fabr...
Reliability improvement of RF MEMS devices based on lifetime measurements
Gürbüz, Ozan Doğan; Demir, Şimşek; Akın, Tayfun; Department of Electrical and Electronics Engineering (2010)
This thesis presents fabrication of shunt, capacitive contact type RF MEMS switches which are designed according to given mm-wave performance specifications. The designed switches are modified for investigation in terms of reliability and lifetime. To observe the real-time performance of switches a time domain measurement setup is established and a CV (capacitance vs. voltage) curve measurement system is also included to measure CV curves, pull-in and hold-down voltages and the shifts of these due to actuat...
Analysis and design of passive microwave and optical devices using the multimode interference technique
Sunay, Ahmet Sertaç; Birand, Mehmet Tuncay; Department of Electrical and Electronics Engineering (2005)
The Multimode Interference (MMI) mechanism is a powerful toool used in the analysis and design of a certain class of optical, microwave and millimeter wave devices. The principles of the MMI method and the self-imaging principle is described. Using this method, NXM MMI couplers, MMI splitter/combiners are analyzed. Computer simulations for illustrating the "Multimode Interference Mechanism" are carried out. The MMI approach is used to analyze overmoded 'rectangular metallic' and 'dielectric slab' type of wa...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
G. C. Yaşınok, “Development of electrochemical etch-stop techniques for integrated MEMS sensors,” M.S. - Master of Science, Middle East Technical University, 2006.