X-band RF switch implementation in substrate integrated waveguide

Erdöl, Tuncay
An RF switch in substrate integrated waveguide (SIW) technology for X-band is designed and demonstrated. Design is based on embedding shunt pin diodes of the switch in an evanescent mode waveguide filter. At reverse bias, pin diodes formed a part of filter's capacitances. Thus switch also functions as a filter when it is in “on” state. At forward bias of diodes, capacitances of the filter are short circuited to obtain a good isolation. The same circuit structure is used to design a tunable filter and an RF power limiter which also functions as a filter. Several RF functions usually used in RF frontends (power limiting, filtering, switching) are combined in a single circuit which helps miniaturization of the frontend. The circuit can be produced with standard PCB and chip&wire technology. The circuits developed have comparable performances with microstrip counterparts and they are advantageous to use in microwave systems using SIW as the basic transmission medium and need filtering functionality.


Low loss substrate integrated waveguide n-way power divider
Mohammadi, Pejman; Demir, Şimşek; Department of Electrical and Electronics Engineering (2012)
Substrate Integrated Waveguide (SIW) technology has been used in designing and fabricating SIW n-way power dividers. In this thesis employing this technology three-port and five-port SIW power dividers are designed and fabricated. These structures are compact in size and the design procedure can be expanded into n-port power dividers. These structures are used with microstrip transition parts however measurement of S-parameters of the main structure are required for comparison. This is carried out with a spe...
Comparative design of millimeter wave RF-MEMS phase shifters
Kobal, Enis; Demir, Şimşek; Department of Electrical and Electronics Engineering (2016)
Phase shifters are widely used for electronic beam steering for various antenna applications. This thesis presents design and comparison of 3 di erent 3-bit transmission type phase shifters, which are switch-line, Distributed MEMS Transmission Line (DMTL) and triple stub phase shifters, realized with capacitive contact Radio Frequency (RF) Micro-Electro-Mechanical Systems (MEMS) switches for Ka-Band applications. For the design of switch-line phase shifter reducing the sensitivity of the electrical performa...
Modeling of helically applied current to the inductively coupled radio frequency plasma torch in two dimensions
Cantürk, Mehmet; Bilikmen, Kadri Sinan; Department of Physics (2004)
The electrodeless plasma discharge is typically driven by radio frequency (RF) power supply within the range (0.2 Ł 40 MHz). The applied power is coupled into the plasma inductively called inductively coupled plasma (ICP). RF ICP technique has achieved significance importance in a diversity of research and industrial applications for over the last threes decades. It is still required to undertake both theoretical and experimental research. In this work, RF ICP technique is applied on the torch modeling in 2...
Cantilever type radio frequency microelectromechanical systems shunt capacitive switch design and fabrication
Demirel, Kaan; Yazgan, Erdem; Demir, Şimşek; Akın, Tayfun (SPIE-Intl Soc Optical Eng, 2015-9-21)
A new cantilever type radio frequency microelectromechanical systems (RF MEMS) shunt capacitive switch design and fabrication is presented. The mechanical, electromechanical, and electromagnetic designs are carried out to get <40 V actuation voltage, high isolation, and low insertion loss for 24 and 35 GHz and the fabrication is carried out for 24 GHz RF MEMS switch. The fabricated switch shows lower than 0.35 dB insertion loss up to 40 GHz and greater than 20 dB isolation at 22 to 29 GHz frequency band. An...
K band substrate integrated waveguide power dividers /
Kiriş, Orçun; Aydın Çivi, Hatice Özlem; Department of Electrical and Electronics Engineering (2014)
In this thesis, various K band power divider structures are developed using the substrate integrated waveguide (SIW) technology. In the design and production of the 1 x 2 Y and T - Junction power dividers known as the conventional power divider types, good agreements are observed between measured and simulated S11 results. Also, the differences between simulated and measured S21 results are approximately 0.4 – 0.8 dB at the operating frequency. In addition to these, 1 x 4 dividers obtained by successive add...
Citation Formats
T. Erdöl, “X-band RF switch implementation in substrate integrated waveguide,” Ph.D. - Doctoral Program, Middle East Technical University, 2012.