K band substrate integrated waveguide power dividers /

Kiriş, Orçun
In this thesis, various K band power divider structures are developed using the substrate integrated waveguide (SIW) technology. In the design and production of the 1 x 2 Y and T - Junction power dividers known as the conventional power divider types, good agreements are observed between measured and simulated S11 results. Also, the differences between simulated and measured S21 results are approximately 0.4 – 0.8 dB at the operating frequency. In addition to these, 1 x 4 dividers obtained by successive addition of the conventional structures are designed and produced. The designed and fabricated Y & Y and T & Y - Junction SIW power dividers have approximately 0.6 dB and 0.4 dB insertion loss differences between the measurement and simulation results respectively. Moreover, there are good agreements between the S11 simulation and measurement results. Furthermore, a novel 1 x 8 power divider is proposed for unequal power division operation. The proposed divider is designed and fabricated to provide almost equal phases and -20 dB SLL Taylor (ñ=3) amplitude distribution at output ports. 8x1 and 8x4 slotted SIW arrays, fed through this power divider, are designed, fabricated and measured. Measurement results are compared with the simulations to verify the designs and measured far fields agree very well with the simulated ones.
Citation Formats
O. Kiriş, “K band substrate integrated waveguide power dividers /,” M.S. - Master of Science, Middle East Technical University, 2014.