Investigation of extended defects in cadmium zinc telluride crystals grown by vertical gradient freeze (VGF) technique

Doğru, Çiğdem
Cadmium Zinc Telluride (CZT) crystal is a promising material due to its high atomic number, room temperature operability and low leakage current. It is used in many important applications such as room temperature gamma ray and X-ray detectors, medical imaging spectrometers. In addition, CdZnTe crystal has been accepted as an excellent substrate for the growth of Hg1-yCdyTe epitaxial layer, which is used for the fabrication of advanced infrared focal plane arrays (IR FPA) due to the good lattice match with Hg1-yCdyTe. However, CZT crystal has a strong tendency to generate defects such as dislocations, inclusions, precipitates, twins and sub-grain boundaries. One of the most successful approaches in identifying the nature and the amount of these defects is based on etching the surface of the crystal. This thesis focuses on different etching studies conducted on Cd0.96Zn0.04Te substrates to reveal the etch-pit formation with the purpose of determining the total defect density throughout the substrate surface. Extensive studies on different etching methods such as Nakagawa, Everson, Inoue and Bagai etchants have been carried to investigate the dislocation density and thus the CZT crystal quality. Following to each etching process, CZT crystals have been characterized by a series of versatile characterization techniques such as Energy Dispersive X-ray (EDS) Spectroscopy, Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The kinetics of each etchant on different substrate orientation was studied and the etch rates were determined. Etch pit formation and its dependence on surface orientation were identified through extensive experiments.


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Cadmium Zinc Telluride (Cd1-xZnxTe, CdZnTe) crystals are used in two different applications depending on Zinc (Zn) concentrations. CdZnTe crystals are one of the most promising materials for X-ray and gamma-ray detector applications due to unique material properties such as high atomic number and high resistivity. Wide band gap and high stopping potential of CdZnTe crystals allow operation at room temperature for high performance detectors with several applications including medical imaging, astronomy, and ...
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Cadmium Zinc Telluride (CdZnTe) is a good candidate for detection of x-ray and gamma-rays due to its high atomic number and large bandgap. CdZnTe is a II-VI group semiconductor and by changing ZnTe concentration, its properties can be altered. CdZnTe crystals having 4% ZnTe is commonly used as a substrate for Mercury Cadmium Telluride (HgCdTe) which is an important absorbing material for infrared imaging applications. For x-ray and gamma-ray detection, on the other hand, ZnTe concentration is kept around 10...
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Citation Formats
Ç. Doğru, “Investigation of extended defects in cadmium zinc telluride crystals grown by vertical gradient freeze (VGF) technique,” M.S. - Master of Science, Middle East Technical University, 2015.