Investigation of silver-induced crystallization of germanium thin films fabricated on different substrates

Date

2015-06-01

Author

Kabacelik, Ismail
KULAKCI, MUSTAFA
Turan, Raşit

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Silver-induced crystallizations of amorphous germanium (alpha-Ge) thin films were fabricated through electron beam evaporation on crystalline silicon (c-Si) (100), aluminum-doped zinc oxide (AZO), and glass substrates at room temperature. The solid-phase crystallization (SPC) of alpha-Ge films was investigated for various post-annealing temperatures between 300 and 500 degrees C for 60 min. Two crystallization approaches were compared: SPC and metal-induced crystallization (MIC). The structural properties of the Ge thin films fabricated by both methods were studied with Raman and X-ray diffraction (XRD) measurements. The Raman and XRD results indicated that the metal-induced crystallization of the Ge thin films yielded crystallization at temperatures considerably lower than those used in the SPC technique. As expected, the amount of crystallization and the quality of the films were improved with increased annealing temperatures. It was also demonstrated that the same material properties could be obtained using different substrates without any significant variation. (C) 2015 Elsevier B.V. All rights reserved.

Subject Keywords

Characterization, Solid phase crystallization, Polycrystalline films, Germanium

URI

https://hdl.handle.net/11511/36142

Collections

Department of Physics, Article