Investigation of silver-induced crystallization of germanium thin films fabricated on different substrates

Kabacelik, Ismail
Turan, Raşit
Silver-induced crystallizations of amorphous germanium (alpha-Ge) thin films were fabricated through electron beam evaporation on crystalline silicon (c-Si) (100), aluminum-doped zinc oxide (AZO), and glass substrates at room temperature. The solid-phase crystallization (SPC) of alpha-Ge films was investigated for various post-annealing temperatures between 300 and 500 degrees C for 60 min. Two crystallization approaches were compared: SPC and metal-induced crystallization (MIC). The structural properties of the Ge thin films fabricated by both methods were studied with Raman and X-ray diffraction (XRD) measurements. The Raman and XRD results indicated that the metal-induced crystallization of the Ge thin films yielded crystallization at temperatures considerably lower than those used in the SPC technique. As expected, the amount of crystallization and the quality of the films were improved with increased annealing temperatures. It was also demonstrated that the same material properties could be obtained using different substrates without any significant variation.


Structural and electrical analysis of poly-Ge films fabricated by e-beam evaporation for optoelectronic applications
Kabacelik, Ismail; KULAKCI, MUSTAFA; Turan, Raşit (2016-12-01)
We have investigated the relationship between structural and electrical properties of Ge thin films deposited on single crystal silicon (100) substrates by electron beam evaporation at room temperature. Post-thermal annealing was applied to obtain poly-crystalline Ge thin films. The structural effects of the annealing temperature and annealing time on the crystallization of Ge films were analyzed using Raman and X-ray diffraction measurements. Raman and X-ray diffraction spectra revealed a structural evolut...
Investigation of plasma deposited hexagonal boron nitride thin films
Anutgan, Mustafa; Katırcıoğlu, Bayram; Department of Physics (2007)
Hexagonal boron nitride (h-BN) thin films are deposited by plasma enhanced chemical vapor deposition (PECVD). Effects of heat treatment and source gases on the structure and physical properties are investigated. Chemical bonding is analyzed in comparison with the better understood isoelectronic carbon compound, graphite. It seems that the basic difference between h-BN and graphite arises from the different electronegativities of boron and nitrogen atoms. Optical absorptions in UV-visible range for crystalli...
Studies on device properties of an n-AgIn5Se8/p-Si heterojunction diode
KALELİ, Murat; Parlak, Mehmet; Ercelebi, C. (2011-10-12)
In this study, polycrystalline thin films of ternary AgIn5Se8 compounds with n-type conductivity were deposited on p-type Si substrates from the powder of a Ag3In5Se9 single crystal by a thermal evaporation technique. Transport and photo-transport properties of the In/n-AgIn5Se8/p-Si/Al sandwich structure were investigated by analyzing temperature-dependent dc current-voltage (I-V), and photo-response measurements carried out in the temperature range of 200-360 K. In order to obtain the series resistance (R...
Investigation of structural and optical parameters of Cu-Ag-In-Se thin films deposited by thermal evaporation method
Gullu, H. H.; CANDAN, İDRİS; COŞKUN, EMRE; Parlak, Mehmet (2015-01-01)
Annealing effect on the structural and optical properties of the quaternary Cu-Ag-In-Se thin film deposited by the thermal evaporation has been investigated. The evaporation source was prepared by using vertical Bridgman-Stockbarger crystal growth system. Structural analysis indicated that annealing the films following to the deposition resulted in the changes from amorphous to polycrystalline phase with the preferred orientation along (1 1 2) direction. In order to determine the optical properties of the t...
Study on the Structural and Electrical Properties of Sequentially Deposited Ag-Ga-In-Te Thin Films
Coskun, EMRE; Gullu, H. H.; Parlak, Mehmet; Ercelebi, C. (2015-02-01)
The structural properties and electrical conduction mechanisms of Ag-Ga-In-Te thin films deposited by a combination of e-beam and thermal evaporation methods were studied for various annealing temperatures. Structural analysis showed the existence of InTe and InTe binary phases at the early stage of crystallization and monophase of AgGaInTe with the main orientation along (112) direction following the post-annealing at 400 C. The effects of the structural changes on electrical properties and temperature dep...
Citation Formats
I. Kabacelik, M. KULAKCI, and R. Turan, “Investigation of silver-induced crystallization of germanium thin films fabricated on different substrates,” JOURNAL OF CRYSTAL GROWTH, pp. 7–11, 2015, Accessed: 00, 2020. [Online]. Available: