Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Structural and optoelectronic properties of sol-gel derived nickel oxide thin films
Download
index.pdf
Date
2017
Author
Saraç, Büşra Ekim
Metadata
Show full item record
Item Usage Stats
895
views
225
downloads
Cite This
Nanocrystalline nickel (II) oxide (NiO) thin films were deposited on glass substrate by spin coating of sol-gel derived solutions. Thin film formation behavior and microstructural / physical properties of the films were investigated as a function of controllable processing parameters, such as thin film thickness and post deposition heat treatment (annealing temperature) in the range of 400 – 500 °C. Microstructural, morphological and optoelectronic properties of NiO films was examined by scanning electron microscopy, atomic force microscopy, X-ray diffraction, UV-Vis spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and temperature-dependent resistivity measurements. It was shown that microstructurally homogeneous and pristine film formation with controllable particle size of 10 – 30 nm can be achieved in a reproducible manner through the sol-gel processing route. Sol-gel derived films of variable thickness in the range of 60 – 170 (± 5 nm), exhibited a transparency of 80 % to 65 % in the visible range, negligible changing with annealing temperature. This work presents a parametric optimization approach of sol- gel deposition of NiO thin films and their optoelectronic characteristics.
Subject Keywords
Thin films.
,
Nickel oxide.
,
Optoelectronics.
URI
http://etd.lib.metu.edu.tr/upload/12620758/index.pdf
https://hdl.handle.net/11511/26251
Collections
Graduate School of Natural and Applied Sciences, Thesis
Suggestions
OpenMETU
Core
Characterization of nanostructured magnetite thin films produced by sol-gel processing
Eken, Ali Erdem; Özenbaş, Ahmet Macit (2009-06-01)
Nanocrystalline films of magnetite have been prepared by a novel sol-gel route in which, a solution of iron (III) nitrate dissolved in ethylene glycol was applied on glass substrates by spin coating. Coating solution showed Newtonian behaviour and viscosity was found as 0.0215 Pa.s. Annealing temperature was selected between 291 and 350 A degrees C by DTA analysis in order to obtain magnetite films. In-plane grazing angle XRD and TEM studies showed that magnetite phase was present upon annealing the films a...
Structural characteristics of thermally evaporated Cu0.5Ag0.5InSe2 thin films
Gullu, H. H.; Parlak, Mehmet (2016-05-01)
In this work, Cu0.5Ag0.5InSe2 (CAIS) thin film samples were prepared by thermal evaporation of Cu, Ag, InSe and Se evaporants sequentially on glass substrates. Following the deposition, annealing processes were applied at different temperatures. The as-grown and annealed CAIS samples were nearly stoichiometric in the detection limit of the compositional measurement. The x-ray diffraction (XRD) measurements revealed that they were in polycrystalline structure with a preferred orientation along the (112) dire...
Structural and optoelectronic properties of vanadium pentoxide thin films deposited by ultrasonic spray pyrolysis.
Koç, Şeyma; Ünalan, Hüsnü Emrah; Department of Metallurgical and Materials Engineering (2019)
Nanocrystalline vanadium pentoxide (V2O5) thin films were deposited onto fluorine doped tin oxide (FTO) coated glass substrates using ultrasonic spray pyrolysis and spin coating methods. The formation behavior of thin films, the effects of different production methods on the characteristics of the films and their microstructural / physical properties were investigated as a function of annealing temperature in the range of 450-550 °C and other controllable process parameters. Structural, morphological and op...
Structural and electrical analysis of poly-Ge films fabricated by e-beam evaporation for optoelectronic applications
Kabacelik, Ismail; KULAKCI, MUSTAFA; Turan, Raşit (2016-12-01)
We have investigated the relationship between structural and electrical properties of Ge thin films deposited on single crystal silicon (100) substrates by electron beam evaporation at room temperature. Post-thermal annealing was applied to obtain poly-crystalline Ge thin films. The structural effects of the annealing temperature and annealing time on the crystallization of Ge films were analyzed using Raman and X-ray diffraction measurements. Raman and X-ray diffraction spectra revealed a structural evolut...
Structural and optical properties of thermally evaporated Ga-In-Se thin films
IŞIK, MEHMET; Güllü, Hasan Hüseyin (2014-05-30)
In this paper, structural and optical properties of Ga-In-Se (GIS) thin films deposited by thermal evaporation technique have been investigated. The effect of annealing was also studied for samples annealed at temperatures between 300 degrees C and 500 degrees C. X-ray diffraction, energy dispersive X-ray analysis and scanning electron microscopy have been used for structural characterization. It was reported that increase of annealing temperature results with better crystallization and chemical composition...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
B. E. Saraç, “Structural and optoelectronic properties of sol-gel derived nickel oxide thin films,” M.S. - Master of Science, Middle East Technical University, 2017.
