Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Structural and optical properties of thermally evaporated Ga-In-Se thin films
Date
2014-05-30
Author
IŞIK, MEHMET
Güllü, Hasan Hüseyin
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
309
views
0
downloads
Cite This
In this paper, structural and optical properties of Ga-In-Se (GIS) thin films deposited by thermal evaporation technique have been investigated. The effect of annealing was also studied for samples annealed at temperatures between 300 degrees C and 500 degrees C. X-ray diffraction, energy dispersive X-ray analysis and scanning electron microscopy have been used for structural characterization. It was reported that increase of annealing temperature results with better crystallization and chemical composition of the films were almost same. Optical properties of the films were studied by transmission measurements in the wavelength range of 320-1100 nm. The direct bandgap transitions with energies in the range of 1.52 eV and 1.65 eV were revealed for the investigated GIS films. Photon energy dependence of absorption coefficient showed that there exist three distinct transition regions for films annealed at 400 degrees C and 500 degrees C. The quasicubic model was applied for these transitions to calculate crystal-field splitting and spin-orbit splitting energy values.
Subject Keywords
Thin films
,
Structural properties
,
Optical properties
URI
https://hdl.handle.net/11511/57636
Journal
MODERN PHYSICS LETTERS B
DOI
https://doi.org/10.1142/s0217984914501012
Collections
Test and Measurement Center In advanced Technologies (MERKEZ LABORATUVARI), Article
Suggestions
OpenMETU
Core
Structural and optical properties of Zn-In-Te thin films deposited by thermal evaporation technique
Gullu, H. H.; Bayrakli, O.; CANDAN, İDRİS; COŞKUN, EMRE; Parlak, Mehmet (2013-07-25)
Annealing effects on structural and optical properties of the thermally evaporated Zn-In-Te(ZIT) thin films have been investigated. The structural and the compositional analyses were carried out by means of X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDXA). The as-grown and annealed ZIT films had polycrystalline structure and the preferred orientation changed from (220) to (112) direction with increasing annealing temperature. The optical properties and constants were determined by transmi...
Structural and optical characteristics of thermally evaporated TlGaSe2 thin films
Isik, M.; KARATAY, AHMET; Hasanlı, Nızamı (2022-02-01)
The present paper reports the structural and optical properties of thermally evaporated TlGaSe2 thin films. X-ray diffraction pattern of evaporated film presented two diffraction peaks around 24.15 and 36.00° which are associated with planes of monoclinic unit cell. Surface morphology of the TlGaSe2 thin films was investigated by scanning electron and atomic force microscopy techniques. Although there was observed some ignorable amount of clusters of quasi-spherical shape in the scanning electron microscope...
Structural characteristics of thermally evaporated Cu0.5Ag0.5InSe2 thin films
Gullu, H. H.; Parlak, Mehmet (2016-05-01)
In this work, Cu0.5Ag0.5InSe2 (CAIS) thin film samples were prepared by thermal evaporation of Cu, Ag, InSe and Se evaporants sequentially on glass substrates. Following the deposition, annealing processes were applied at different temperatures. The as-grown and annealed CAIS samples were nearly stoichiometric in the detection limit of the compositional measurement. The x-ray diffraction (XRD) measurements revealed that they were in polycrystalline structure with a preferred orientation along the (112) dire...
Investigation of structural and optical characteristics of thermally evaporated Ga2Se3 thin films
Isik, M.; Hasanlı, Nızamı (2020-09-01)
Ga2Se3 thin films were prepared by thermal evaporation technique and structural, optical characteristics of the deposited thin films were investigated in the present study. X-ray diffraction pattern of the thin film exhibited one intensive and sharp peak associated with (111) plane of cubic crystalline structure of the compound. Energy dispersive spectroscopic analyses pointed out the atomic compositional ratio of the constituent elements as consistent with chemical formula of Ga2Se3. The optical characteri...
Structural and optical properties of thermally annealed thallium indium disulfide thin films
Guler, I; Hasanlı, Nızamı (Elsevier BV, 2020-06-30)
Structural and optical properties of thallium indium disulfide (TlInS2) thin films, deposited by thermal evaporation technique and thermally annealed at different temperatures, were analyzed. Crystallite size, dislocation density and lattice strain of the thin films were found from X-ray diffraction experiments. The atomic compositions of the films were determined from energy dispersive spectroscopy analysis. Surface morphology of the films was analyzed using atomic force microscopy. From room temperature t...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
M. IŞIK and H. H. Güllü, “Structural and optical properties of thermally evaporated Ga-In-Se thin films,”
MODERN PHYSICS LETTERS B
, pp. 0–0, 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/57636.