Deposition of Cu-Zn-Sn-Se (cztse) thin films and investigation of their device properties

Date

2018

Author

Bayraklı, Özge

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Thin Film Solar Cell has received a considerable attention in the photovoltaic industry. While the efficiency of thin film amorphous silicon is about %14, the efficiency of Cu(In,Ga)Se2 (CIGS) thin film based solar cells which are very popular in recent years, reached the value of %20. But CIGS based solar cells have some constraints such as their extensive and large scale production in terms of availability of its constituent elements. On the other hand, Kesterite based solar cells such as Cu2ZnSnSe4 (CZTSe) have been more popular due to their constituent elements, such as Zn and Sn which are more abundant and less expensive than In and Ga. These thin film materials are direct band gap semiconductors. Their absorption coefficient values are over 104 cm-1 and the band gap values of them are in the range of 1.45-1.6 eV. These values are close to the values for the ideal solar cell. In this study, Cu-Zn-S-Se compounds belonging to Kesterite family have been deposited as a thin film. Thermal evaporation has been used as deposition method. Then electrical, optical and structural characterizations of CZTSe thin films have been carried out and the device application of the thin film has been studied to get efficient solar cell production.

Subject Keywords

Photovoltaic cells, Solar cells

URI

http://etd.lib.metu.edu.tr/upload/12621910/index.pdf
https://hdl.handle.net/11511/27137

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Graduate School of Natural and Applied Sciences, Thesis

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Citation Formats

Ö. Bayraklı, “Deposition of Cu-Zn-Sn-Se (cztse) thin films and investigation of their device properties,” Ph.D. - Doctoral Program, Middle East Technical University, 2018.