Applications of ions produced by low intensity repetitive laser pulses for implantation into semiconductor materials

Date

2008-01-01

Author

Wolowski, J.
Badziak, J.
Czarnecka, A.
Parys, P.
Pisarek, M.
Rosinski, M.
Turan, Raşit
Yerci, Selçuk

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

211
views

0
downloads

This work reports experiment concerning specific applications of implantation of laser-produced ions for production of semiconductor nanocrystals. The investigation was carried out in the IPPLM within the EC STREP 'SEMINANO' project. A repetitive pulse laser system of parameters: energy up to 0.8 J in a 3.5 ns-pulse, wavelength of 1.06 mu m, repetition rate of up to 10 Hz, has been employed in these investigations. The characterisation of laser-produced ions was performed with the use of 'time-of-flight' ion diagnostics simultaneously with other diagnostic methods in dependence on laser pulse parameters, illumination geometry and target material. The properties of laser-implanted and modified SiO(2) layers on sample surface were characterised with the use of different methods (XPS+ASD, Raman spectroscopy, PL spectroscopy) at the Middle East Technological University in Ankara and at the Warsaw University of Technology. The production of the Ge nanocrystallites has been demonstrated for annealed samples prepared in different experimental conditions.

Subject Keywords

Ion implantation, Laser-produced ions, Ge nanocrystallites

URI

https://hdl.handle.net/11511/30026

Journal

RADIATION EFFECTS AND DEFECTS IN SOLIDS

DOI

https://doi.org/10.1080/10420150701781076

Collections

Graduate School of Natural and Applied Sciences, Article

Suggestions

OpenMETU
Core

Application of pulsed laser deposition and laser-induced ion implantation for formation of semiconductor nano-crystallites WOLOWSKI, JERY; BADZIAK, JAN; CZARNECKA, ANNA; PARYS, PİETR; PISAREK, MARCİN; ROSINSKI, MARCİN; Turan, Raşit; Yerci, Selçuk (2007-03-01) This work describes the application of laser ion source (LIS) for fabrication of semiconductor nanostructures, as well as relevant equipment completed and tested in the IPPLM for the EU STREP "SEMINANO" project and the obtained experimental results. A repetitive Pulse laser system of parameters: energy of similar to 0.8 J in a 3.5 ns-pulse, wavelength of 1.06 mu m, repetition rate of up to 10 Hz and intensity on the target of up to 10(11) W/cm(2), has been employed to produce Ge ions intended for ion implan...
Multicomponent ion exchange on zeolite 4A Kadaifci, Bijen; Yücel, Hayrettin; Department of Chemical Engineering (2011) In this study binary and ternary ion exchange on Zeolite NaA using silver and cadmium ions were investigated. Ion exchange were conducted at constant temperature (25oC) and normality (0.1N) in a batch system for both binary and ternary experiments. Zeolite weights were varied between 0.1 and 1 g for binary experiments. Thermodynamic analysis of binary ion exchange between Cd2+-Na+ and Ag+-Na+ were examined and thermodynamic equilibrium constant and Gibbs free energy were calculated. Thermodynamic equilibriu...
Modification of semiconductor materials with the use of plasma produced by low intensity repetitive laser pulses Wolowski, J.; Rosinski, M.; Badziak, J.; Czarnecka, A.; Parys, P.; Turan, Raşit; Yerci, Selçuk (2007-10-19) This work reports experiments concerning specific application of laser-produced plasma at IPPLM in Warsaw. A repetitive pulse laser system of parameters: energy up to 0.8 J in a 3.5 ns-pulse wavelength of 1.06 mu m, repetition rate of up to 10 Hz, has been employed in these investigations. The characterisation of laser-produced plasma was performed with the use of "time-of-flight" ion diagnostics simultaneously with other diagnostic methods. The results of laser-matter interaction were obtained in dependenc...
Biosensors Based on Nano-Gold/Zeolite-Modified Ion Selective Field-Effect Transistors for Creatinine Detection Kasap, Berna Ozansoy; Marchenko, Svitlana V.; Soldatkin, Oleksandr O.; Dzyadevych, Sergei V.; Akata Kurç, Burcu (2017-03-02) The combination of advantages of using zeolites and gold nanoparticles were aimed to be used for the first time to improve the characteristic properties of ion selective field-effect transistor (ISFET)-based creatinine biosensors. The biosensors with covalently cross-linked creatinine deiminase using glutaraldehyde (GA) were used as a control group, and the effect of different types of zeolites on biosensor responses was investigated in detail by using silicalite, zeolite beta (BEA), nano-sized zeolite beta...
Investigation of characteristics of urea and butyrylcholine chloride biosensors based on ion-selective field-effect transistors modified by the incorporation of heat-treated zeolite Beta crystals Soy, Esin; Arkhypova, Valentyna; Soldatkin, Oleksandr; Shelyakina, Margarita; Dzyadevych, Sergei; Warzywoda, Juliusz; Sacco, Albert; Akata Kurç, Burcu (2012-10-01) Urea and butyrylcholine chloride (BuChCl) biosensors were prepared by adsorption of urease and butyrylcholinesterase (BuChE) on heat-treated zeolite Beta crystals, which were incorporated into membranes deposited on ion-selective field-effect transistor (ISFET) surfaces. The responses, stabilities, and use for inhibition analysis of these biosensors were investigated. Different heat treatment procedures changed the amount of Bronsted acid sites without affecting the size, morphology, overall Si/Al ratio, ex...

Citation Formats

J. Wolowski et al., “Applications of ions produced by low intensity repetitive laser pulses for implantation into semiconductor materials,” RADIATION EFFECTS AND DEFECTS IN SOLIDS, pp. 589–595, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30026.