Modification of semiconductor materials with the use of plasma produced by low intensity repetitive laser pulses

Date

2007-10-19

Author

Wolowski, J.
Rosinski, M.
Badziak, J.
Czarnecka, A.
Parys, P.
Turan, Raşit
Yerci, Selçuk

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This work reports experiments concerning specific application of laser-produced plasma at IPPLM in Warsaw. A repetitive pulse laser system of parameters: energy up to 0.8 J in a 3.5 ns-pulse wavelength of 1.06 mu m, repetition rate of up to 10 Hz, has been employed in these investigations. The characterisation of laser-produced plasma was performed with the use of "time-of-flight" ion diagnostics simultaneously with other diagnostic methods. The results of laser-matter interaction were obtained in dependence on laser pulse parameters, illumination geometry and target material. The modified SiO2 layers and sample surface properties were characterised with the use of different methods at the Middle-East Technological University in Ankara and at the Warsaw University of technology. The production of the Ge nanocrystallites has been demonstrated for annealed samples prepared in different experimental conditions.

Subject Keywords

Laser-produced ions, Ion implantation of semiconductor materials

URI

https://hdl.handle.net/11511/53093

Conference Name

International Conference on Research and Applications of Plasmas/4th German-Polish Conference on Plasma Diagnostics for Fusion and Applications/6th French-Polish Seminar on Thermal Plasma in Space and Laboratory (PLASMA 2007)

Collections

Department of Physics, Conference / Seminar

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Citation Formats

J. Wolowski et al., “Modification of semiconductor materials with the use of plasma produced by low intensity repetitive laser pulses,” Greifswald, GERMANY, 2007, vol. 993, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/53093.