Raman and XRD studies of Ge nanocrystals in alumina films grown by RF-magnetron sputtering

Date

2008-08-08

Author

Caldelas, R.
Rolo, A. G.
Gomes, M. J. M.
Alves, E.
Ramos, A. R.
Conde, O.
Yerci, Selçuk
Turan, Raşit

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Germanium (Ge) nanocrystals (NCs) embedded in alumina thin films were produced by deposition on fused silica and silicon (111) substrates using radio-frequency (RF) magnetron sputtering. The films were characterised by both Raman and X-ray diffraction (XRD) spectroscopy. The deposition conditions were optimised in order to obtain crystalline Ge nanoparticles. In as-deposited films, the typical NC size was similar to 3 nm as estimated by means of X-ray diffraction. Raman spectra taken from as-deposited films revealed both amorphous and crystalline semiconductor phases. Annealing was performed in order to improve the crystallinity of the semiconductor phase in the films. After a 1 h annealing at 800 degrees C the mean NC size estimated from the XRD data and Raman spectra increased to similar to 6.5 nm. An increase in the crystallinity of the Ge phase was also confirmed by the Raman spectroscopy data.

Subject Keywords

Germanium, Nanocrystals, X-ray diffraction, Raman spectroscopy

URI

https://hdl.handle.net/11511/30220

Journal

VACUUM

DOI

https://doi.org/10.1016/j.vacuum.2008.03.067

Collections

Graduate School of Natural and Applied Sciences, Article

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Citation Formats

R. Caldelas et al., “Raman and XRD studies of Ge nanocrystals in alumina films grown by RF-magnetron sputtering,” VACUUM, pp. 1466–1469, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30220.