Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Fe-, Ni- and Co-induced crystallization of ge thin films fabricated on different substrates for photovoltaic applications
Date
2018-07-06
Author
Kabaçelik, İsmail
Kulakcı, Mustafa
Turan, Raşit
Metadata
Show full item record
Item Usage Stats
218
views
0
downloads
Cite This
Metal-induced (Fe-, Ni- and Co-) crystallization of amorphous germanium (a-Ge) thin films were investigated by depositing Ge on c-Si (100) and glass substrates by means of electron beam evaporation. The samples were exposed to post-annealing temperatures of 300, 400 and 500 o C for 1 hour (h). The crystal structure of the Ge films was characterized with a Raman spectrum and X-ray diffraction (XRD) measurements. The Raman spectrum of the samples as-deposited and annealed at a temperature of 300 °C gives broad Raman band with a peak position at around 277 cm-1. The broad and weak peaks observed near 277 cm-1 can be assigned to the amorphous Ge–Ge TO modes. As the annealing temperature increased from 300 o C to 400 o C, the peak intensity of crystalline Ge–Ge mode increased and amorphous Ge–Ge mode decreased due to improvements in the structural order [1,2]. The XRD diffraction patterns of the as-deposited and annealed at 300 o C Ge films show a very broad peak which indicates amorphous structure of films. The samples annealed at 400 o C exhibit three diffraction peaks at 27o , 46o and 53o , corresponding to the diffraction from (111), (220), and (311) planes of the Ge films for both substrates, respectively. When the annealing temperature is increased to 500 o C, the intensity of the Ge (111) peaks increased significantly. Also, the intensity of the Ge (220) and Ge (311) orientations become gradually stronger with the increase of the annealing temperature. These findings could be very useful to realize inexpensive Ge based electronic and photovoltaic applications.
Subject Keywords
Thin film
,
Metal-induced crystallization
,
Structural
,
Photovoltaic
URI
https://hdl.handle.net/11511/88323
http://pvcon.org/wp-content/uploads/2019/09/Abstract-Book-PVCON2018.pdf
http://pvcon.org/pvcon2018-abstractbook/
Conference Name
International Conference on Photovoltaic Science and Technologies, 4 - 6 July 2018
Collections
Department of Physics, Conference / Seminar
Suggestions
OpenMETU
Core
Investigation of silver-induced crystallization of germanium thin films fabricated on different substrates
Kabacelik, Ismail; KULAKCI, MUSTAFA; Turan, Raşit (2015-06-01)
Silver-induced crystallizations of amorphous germanium (alpha-Ge) thin films were fabricated through electron beam evaporation on crystalline silicon (c-Si) (100), aluminum-doped zinc oxide (AZO), and glass substrates at room temperature. The solid-phase crystallization (SPC) of alpha-Ge films was investigated for various post-annealing temperatures between 300 and 500 degrees C for 60 min. Two crystallization approaches were compared: SPC and metal-induced crystallization (MIC). The structural properties o...
Device Characterization of ZnInSe2 Thin Films
Gullu, H. H.; Parlak, Mehmet (Elsevier BV; 2016-01-01)
p-Si/n-ZnInSe2 hetero-junction diode was deposited by thermal evaporation of elemental evaporation sources on the 600 mu m thick p-type (1 1 1) mono-crystalline Si wafers having the resistivity value of 1 - 3 (Omega.cm). Detailed electrical characterization of the hetero-junction was performed by the help of temperature dependent current-voltage measurements. The forward current-voltage behaviour of the hetero-junction diode was investigated under the evaluation of possible current transport mechanisms. In ...
Investigation of cell migration and proliferation in agarose based hydrogels for tissue engineering applications
Vardar, Elif; Hasırcı, Nesrin; Hasırcı, Vasıf Nejat; Department of Biomedical Engineering (2010)
Hydrogels are three dimensional, insoluble, porous and crosslinked polymer networks. Due to their high water content, they have great resemblance to natural tissues, and therefore, demonstrate high biocompatibility. The porous structure provides an aqueous environment for the cells and also allows influx of nutrients needed for cellular viability. In this study, a natural biodegradable material, agarose (Aga), was used and semi-interpenetrating networks (semi-IPN) were prepared with polymers having differen...
Quantum chemical calculations of warfarin sodium, warfarin and its metabolites
Tekin, Emine Deniz (Calisir); ERKOÇ, Figen; YILDIZ, İLKAY; Erkoç, Şakir (2008-07-01)
The structural, vibrational and electronic properties of warfarin sodium, warfarin and its metabolites have been investigated theoretically by performing the molecular mechanics (MM+ force field), the semi-empirical self-consistent-field molecular-orbital (AM1), and density functional theory calculations. The geometry of the molecules have been optimized, the vibrational dynamics and the electronic properties of the molecules have been calculated in their ground state in gas phase.
Electroforming of thin film silicon based homojunction pin diode
ANUTGAN, MUSTAFA; ANUTGAN, TAMİLA; ATILGAN, İSMAİL; Katircioglu, B. (2012-10-01)
The recent observations of bright visible electroluminescence (EL) from electroformed thin film silicon based wide-gap alloys are further clamped down in a simpler structure. For this purpose, a standard quality, ordinary hydrogenated amorphous silicon (a-Si:H) homojunction pin diode was fabricated by plasma enhanced chemical vapor deposition. The fresh diode was characterized by temperature scanned current-voltage (I-V) and constant photocurrent measurements. The energy distribution of density of states wi...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
İ. Kabaçelik, M. Kulakcı, and R. Turan, “Fe-, Ni- and Co-induced crystallization of ge thin films fabricated on different substrates for photovoltaic applications,” Ankara, Türkiye, 2018, p. 178, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/88323.