Electroluminescence from Er-doped Si-rich silicon nitride light emitting diodes

Date

2010-08-23

Author

Yerci, Selçuk
DAL NEGRO, Luca

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

133
views

0
downloads

Electrical devices based on Erbium (Er) doping of silicon nitride have been fabricated by reactive cosputtering and intense, room temperature Er electroluminescence was observed in the visible (527, 550, and 660 nm) and near-infrared (980 and 1535 nm) spectral ranges at low injection voltages (< 5 V EL turn on). The electrical transport mechanism in these devices was investigated and the excitation cross section for the 1535 nm Er emission was measured under electrical pumping, resulting in a value (1.2x10(-15) cm(2)) comparable to optical pumping. These results indicate that Er-doped silicon nitride has a large potential for the engineering of light sources compatible with Si technology. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3483771]

Subject Keywords

1.54 MU-M, Cavities

URI

https://hdl.handle.net/11511/30511

Journal

APPLIED PHYSICS LETTERS

DOI

https://doi.org/10.1063/1.3483771

Collections

Graduate School of Natural and Applied Sciences, Article

Suggestions

OpenMETU
Core

Microwave sintering and characterization of soft magnetic powder metallurgical Ni-Fe alloys Erdem, Derya; Dericioğlu, Arcan Fehmi; Department of Metallurgical and Materials Engineering (2011) In this study, prealloyed austenitic stainless steel and premixed soft magnetic Ni-Fe permalloy compacts were consolidated through microwave and conventional sintering routes at combinations of various sintering temperatures and compaction pressures. Sintered alloys were characterized in terms of their densification, microstructural evolution as well as mechanical and magnetic properties. The effect of sintering method in terms of the applied sintering parameters on the final properties of the compacts were...
Magnetic ordering in two ferromagnetic sublattices of two mixed-valence iron(II)-iron(III) metal formate frameworks Yurtseven, Hasan Hamit (2019-11-01) Temperature dependence of magnetization (M) is calculated for two mixed-valence iron(II) - iron(III) metal formate frameworks (MOFs) with the two ferromagnetic sublattices below T-comp (compensation temperature) at 100 Oe by the molecular field theory. Temperature dependence of magnetization (M-T) is analyzed between T(comp )and T-ord = 39K (ordering temperature) by the power-law formula using the literature data for those compounds. Power-law analysis is also carried out for the field dependence of magneti...
Electrical properties and photoconductivity of polyaniline/sulfonated poly(arylene ether sulfone) composite films Sankir, Nurdan D.; Sankir, Mehmet; Parlak, Mehmet (Springer Science and Business Media LLC, 2009-05-01) Temperature dependent electrical conductivity of the polyaniline-sulfonated poly(arylene ether sulfone) with 35 mol percent sulfonation (PANI-BPS35) composite films were investigated in the temperature range of 80-380 K. These composite films showed semiconductor behavior with the exponential variation of inverse temperature dependence of electrical conductivity. Calculated Mott's parameters showed that variable range hopping mechanism is the dominant transport mechanism for the carriers in low temperature ...
Electrical and photoconductive properties of GaS0.75Se0.25 mixed crystals KARABULUT, ORHAN; Parlak, Mehmet; Yılmaz, Koray Kamil; Hasanlı, Nızamı (Wiley, 2005-03-01) The conductivity, mobility, photoconductivity and photo response measurements in GaS0.75Se0.25 mixed crystals were carried out in the temperature range of 150-450 K. The room temperature conductivity, mobility and electron concentration values were 10(-9) (Omega-cm)(-1), 48 cm(2)V(-1) s(-1) and similar to 10(9) cm(-3), respectively. Two donor levels were obtained from temperature-dependent conductivity and carrier concentration, located at energies of about 755 and 465 meV below the conduction band. Single ...
Brillouin frequency shifts in the ferroelectric phase of NaNO2 Yurtseven, Hasan Hamit (2001-10-01) In this study we calculate the Brillouin frequencies for the L-mode [010], [001] and [100] in the ferroelectric phase of NaNO2 (T-C = 163 C) by means of gamma -Gruneisen relations using the thermal expansivity data from the literature. The predicted frequencies are in good agreement with the observed Brillouin frequencies for the modes studied in the ferroelectric phase of NaNO2. This indicates that our method presented here predicts the observed behavior of NaNO2 in the ferroelectric phase.

Citation Formats

S. Yerci and L. DAL NEGRO, “Electroluminescence from Er-doped Si-rich silicon nitride light emitting diodes,” APPLIED PHYSICS LETTERS, pp. 0–0, 2010, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30511.