Temperature dependence of the energy transfer from amorphous silicon nitride to Er ions

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2009-07-27

Author

Li, R.
Yerci, Selçuk
Dal Negro, L.

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The 1.54 mu m photoluminescence and decay time of Er-doped amorphous silicon nitride films with different Si concentrations are studied in the temperature range of 4 to 320 K. The temperature quenching of the Er emission lifetime demonstrates the presence of nonradiative trap centers due to excess Si in the films. The temperature dependence and the dynamics of the energy coupling between amorphous silicon nitride and Er ions are investigated at different temperatures using two independent methods, which demonstrate phonon-mediated energy coupling. These results can lead to the engineering of more efficient Er-doped, Si-based light sources for on-chip nanophotonics applications.

Subject Keywords

Doping profiles, Erbium, Phonons, Photoluminescence, Silicon compounds, Thin films

URI

https://hdl.handle.net/11511/30547

Journal

APPLIED PHYSICS LETTERS

DOI

https://doi.org/10.1063/1.3186062

Collections

Graduate School of Natural and Applied Sciences, Article

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Citation Formats

R. Li, S. Yerci, and L. Dal Negro, “Temperature dependence of the energy transfer from amorphous silicon nitride to Er ions,” APPLIED PHYSICS LETTERS, pp. 0–0, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30547.