Temperature dependence of the energy transfer from amorphous silicon nitride to Er ions

Li, R.
Yerci, Selçuk
Dal Negro, L.
The 1.54 mu m photoluminescence and decay time of Er-doped amorphous silicon nitride films with different Si concentrations are studied in the temperature range of 4 to 320 K. The temperature quenching of the Er emission lifetime demonstrates the presence of nonradiative trap centers due to excess Si in the films. The temperature dependence and the dynamics of the energy coupling between amorphous silicon nitride and Er ions are investigated at different temperatures using two independent methods, which demonstrate phonon-mediated energy coupling. These results can lead to the engineering of more efficient Er-doped, Si-based light sources for on-chip nanophotonics applications.


Energy transfer and 1.54 mu m emission in amorphous silicon nitride films
Yerci, Selçuk; Kucheyev, S. O.; VAN BUUREN, TONY; Basu, S. N.; Dal Negro, L. (2009-07-20)
Er-doped amorphous silicon nitride films with various Si concentrations (Er:SiNx) were fabricated by reactive magnetron cosputtering followed by thermal annealing. The effects of Si concentrations and annealing temperatures were investigated in relation to Er emission and excitation processes. Efficient excitation of Er ions was demonstrated within a broad energy spectrum and attributed to disorder-induced localized transitions in amorphous Er:SiNx. A systematic optimization of the 1.54 mu m emission was pe...
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The temperature dependence of the piezoelectric resonance frequency is analyzed by the power-law formula in the vicinity of the critical temperature of the incommensurate (INC) phase in quartz using the experimental data from the literature. By considering the piezoelectric resonance frequency as an order parameter of the INC phase, correlation between the piezoelectric resonance frequency and the strain is constructed, which both decrease linearly with increasing temperature toward T-c in quartz. Our resul...
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In this work, we have studied the temperature effects on the recrystallization process and on the energy band gap of the TlInSe(2)xS(2(1 - x)) mixed crystals at the critical composition (x = 0.3) where structural phase transition from tetragonal to monoclinic takes place. Remarkable effect which included permanent recrystallization process, enlargements in the monoclinic crystallite size, decreases in the compressing strain and in the dislocation density as well as in the stacking faults and in the energy b...
Temperature dependent band gap in SnS2xSe(2-2x) (x=0.5) thin films
Delice, S.; Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Hasanlı, Nızamı; Parlak, Mehmet (Elsevier BV, 2020-08-01)
Structural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy and scanning electron microscopy methods were used for structural characterization while temperature-dependent transmission measurements carried out at various temperatures in between 10 and 300 K were accomplished for optical investigations. X-ray diffract...
Citation Formats
R. Li, S. Yerci, and L. Dal Negro, “Temperature dependence of the energy transfer from amorphous silicon nitride to Er ions,” APPLIED PHYSICS LETTERS, pp. 0–0, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30547.