Temperature effects on the structural and optical properties of the TlInSe2xS2(1-x) mixed crystals (x=0.3)

Date

2017-11-15

Author

Omar, A.
Qasrawi, A. F.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

175
views

0
downloads

In this work, we have studied the temperature effects on the recrystallization process and on the energy band gap of the TlInSe(2)xS(2(1 - x)) mixed crystals at the critical composition (x = 0.3) where structural phase transition from tetragonal to monoclinic takes place. Remarkable effect which included permanent recrystallization process, enlargements in the monoclinic crystallite size, decreases in the compressing strain and in the dislocation density as well as in the stacking faults and in the energy band gap with increasing temperature were observed. In addition, the temperature dependent energy band gap of the crystal which is investigated in the same temperature range that was used for the recrystallization process revealed that the recrystallization process is associated with energy band gap narrowing.

Subject Keywords

Deformation, Defects in solids, Optical properties, Smart materials

URI

https://hdl.handle.net/11511/40817

Journal

JOURNAL OF ALLOYS AND COMPOUNDS

DOI

https://doi.org/10.1016/j.jallcom.2017.06.337

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Temperature-dependent structural transition, electronic properties and impedance spectroscopy analysis of Tl2InGaS4 crystals grown by the Bridgman method Qasrawi, A. F.; Alkarem, Qotaibah A.; Hasanlı, Nızamı (2018-09-01) In this work, we report the temporary structural modifications associated with the in situ heating of the Tl2InGaS4 crystals in the temperature range of 300-420 K. The analysis of the X-ray diffraction patterns revealed the temperature-independent possible phase transformations between the monoclinic and triclinic phases. The temperature analysis of the lattice parameters, crystallite size, strain, dislocation density and stacking faults has shown a temporary enhancement in the crystallinity of this compoun...
Temperature dependence of the polarization and tilt angle under an electric field close to the smectic AC* phase transition in a ferroelectric liquid crystal Yurtseven, Hasan Hamit (Informa UK Limited, 2008-01-01) The temperature dependence of the polarization P and the tilt angle theta is calculated here in the presence of a constant electric field near the smectic AC* phase transition of a ferroelectric liquid crystal using a mean field model. We demonstrate here the temperature dependence of P and theta under some fixed electric fields for the ferroelectric liquid crystal of 4-(3-methyl-2-chlorobutanoyloxy)-4'-heptyloxybiphenyl. Our predicted values of P and theta at various temperatures under fixed electric field...
Temperature and pressure dependence of the Raman intensity and frequency of a soft mode near the tricritical point in the ferroelectric SbSI Yurtseven, Hasan Hamit (Informa UK Limited, 2016-01-01) We analyze the pressure dependence of the intensity and the frequency of a soft mode from the Raman and elastic light scattering experiments as reported in the literature close to the ferroelectric - paraelectric transition in SbSI crystal. The Raman intensity of this mode is analyzed as a function of pressure at constant temperatures of 272K (first order transition) and 234K (tricritical or second order transition) according to a power-law formula. Our analysis of the Raman intensity gives closely the mean...
Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals Isik, M.; Guler, I.; Hasanlı, Nızamı (2013-01-01) Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction ban...
Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2005-05-01) The dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TIGaS2 single crystals in the temperature regions of 100-350, 200-350, 200-290 and 100-350 K, respectively, have been measured and analysed. The Hall coefficient measurements revealed the extrinsic type of conduction with conductivity-type conversion from p- to n-type at a critical temperature of 315 K. The temperature dependence of the dark electrical conduct...

Citation Formats

A. Omar, A. F. Qasrawi, and N. Hasanlı, “Temperature effects on the structural and optical properties of the TlInSe2xS2(1-x) mixed crystals (x=0.3),” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 98–102, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40817.