Energy transfer and 1.54 mu m emission in amorphous silicon nitride films

Yerci, Selçuk
Kucheyev, S. O.
Basu, S. N.
Dal Negro, L.
Er-doped amorphous silicon nitride films with various Si concentrations (Er:SiNx) were fabricated by reactive magnetron cosputtering followed by thermal annealing. The effects of Si concentrations and annealing temperatures were investigated in relation to Er emission and excitation processes. Efficient excitation of Er ions was demonstrated within a broad energy spectrum and attributed to disorder-induced localized transitions in amorphous Er:SiNx. A systematic optimization of the 1.54 mu m emission was performed and a fundamental trade-off was discovered between Er excitation and emission efficiency due to excess Si incorporation. These results provide an alternative approach for the engineering of sensitized Si-based light sources and lasers.


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Li, Rui; Yerci, Selçuk; Kucheyev, Sergei O.; van Buuren, Tony; Dal Negro, Luca (2011-03-14)
Neodymium (Nd) doped amorphous silicon nitride films with various Si concentrations (Nd:SiNx) were fabricated by reactive magnetron co-sputtering followed by thermal annealing. The time dynamics of the energy transfer in Nd:SiNx was investigated, a systematic optimization of its 1.1 mu m emission was performed, and the Nd excitation cross section in SiNx was measured. An active Nd:SiNx micro-disk resonator was fabricated and enhanced radiation rate at 1.1 mu m was demonstrated due to stimulated emission at ...
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The 1.54 mu m photoluminescence and decay time of Er-doped amorphous silicon nitride films with different Si concentrations are studied in the temperature range of 4 to 320 K. The temperature quenching of the Er emission lifetime demonstrates the presence of nonradiative trap centers due to excess Si in the films. The temperature dependence and the dynamics of the energy coupling between amorphous silicon nitride and Er ions are investigated at different temperatures using two independent methods, which dem...
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Dielectric and electrical properties of a benzotriazole and fluorene copolymer were investigated using current-voltage (IV), capacitance-voltage (CV), and conductancevoltage (G/wV) measurements at room temperature. The electrical parameters, barrier height (phi Bo), and ideality factor (n) obtained from the forward bias LnI-V plot were found as 0.453 eV and 2.08, respectively. The Rsvalues were found as 2.20, 2.12, 1.90 using dV/dLnIversus I, H(I)versus I and F(V)-V plots,respectively. The dielectric consta...
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Production of beta-rhombohedral boron carbide (B4C) on a tungsten substrate by the chemical vapor deposition from a BCl3-H-2-CH4 gas mixture was achieved. An impinging-jet reactor was used to minimize the mass-transfer limitations on the reaction kinetics, which made a detailed kinetic investigation possible. Results of the XRD and XPS analyses showed that the solid product formed on the substrate is a rhombohedral B4C phase. Both dichloroborane and boron carbide formation rates were found to increase with ...
Light Emission from Silicon-Rich Nitride Nanostructures
Dal Negro, Luca; Li, Rui; Warga, Joseph; Yerci, Selçuk; Basu, Soumendra; Hamel, Sebastien; Galli, Giulia (Jenny Stanford Publishing, 2008-01-01)
Light-emitting Si-rich silicon nitride (SRN) films were fabricated by plasma enhanced chemical vapor deposition followed by low temperature (500–900°C) annealing. The optical properties of SRN films were studied by micro-Raman and photoluminescence spectroscopy and indicate the presence of small Si clusters characterized by broad near-infrared emission, large absorption/emission Stokes shift, and nanosecond recombination. Our results are supported by first-principles simulations indicating that N atoms bond...
Citation Formats
S. Yerci, S. O. Kucheyev, T. VAN BUUREN, S. N. Basu, and L. Dal Negro, “Energy transfer and 1.54 mu m emission in amorphous silicon nitride films,” APPLIED PHYSICS LETTERS, pp. 0–0, 2009, Accessed: 00, 2020. [Online]. Available: