Two-Dimensional Numerical Analysis of Phosphorus Diffused Emitters on Black Silicon Surfaces

Date

2018-07-06

Author

TÜRKAY, Deniz
Yerci, Selçuk

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

253
views

0
downloads

In this work, we present an analysis on electrical performance of phosphorus diffused emitters on black silicon surfaces through two-dimensional simulations. In particular, we focus on the extraction and analysis of the emitter saturation current density (J(0e)), the sheet resistance (R-sh), spatial collection efficiency profile and relatedly J(sc) of a solar cell. Using process simulations, we form emitters on periodic triangular structures with various aspect ratios (R) and emitter profiles. We show that for high aspect ratio and highly-doped structures, the trend of increasing J(0e) with junction depth, observed for planar structures, is reversed. While R-sh increase with aspect ratio for shallow emitters, it is weakly dependent on aspect ratio for deep emitters, irrespective of the peak dopant concentration. For highly-doped emitters, the losses in J(sc) can be excessive if the junction depth is larger than the texture size. These losses are negligible for lightly-doped emitters regardless of aspect ratio and junction depth. The trends presented in this study for high aspect ratio emitters in comparison with one-dimensional emitters are expected to provide guidance in the identification of non-idealities that are observed in emitters formed on black silicon surfaces, such as additional surface and bulk defects.

Subject Keywords

Emitter, Phosphorus, Electrical, Simulation

URI

https://hdl.handle.net/11511/31595

DOI

https://doi.org/10.1109/pvcon.2018.8523912

Collections

Graduate School of Natural and Applied Sciences, Conference / Seminar

Suggestions

OpenMETU
Core

Application of computer-aided injection moulding simulation for thermoplastic materials Onalir, B; Kaftanoglu, B; Balkan, Raif Tuna (1998-01-01) This paper presents the computer-aided simulation of an injection moulding process for thermoplastic materials. The reasons for using computer simulation for the injection moulding process are discussed together with description of the mould-filling and cooling phenomena. The paper also traces the difficulties in transferring the geometry of the part database from a computer-aided design environment to a computer-aided analysis environment by proposing several solutions for plastic products. Details of simu...
A Detailed Analysis for the Absorption Coefficient of Multilevel Uncooled Infrared Detectors Küçük, Serhat; Akın, Tayfun (2011-04-29) This paper introduces a detailed analysis on the calculation of the absorption coefficient of multilevel uncooled infrared detectors. The analysis is carried out considering a two-level 25 mu m pixel pitch infrared detector with a sandwich type resistor which is divided into sub-regions consisting of different stacks of layers. The absorption coefficients of these different sub-regions are calculated individually by using the cascaded transmission line model, including the main body, arms, and the regions w...
Experimental investigation of effects of cutting parameters on surface roughness in the WEDM process Gökler, Mustafa İlhan (2000-10-01) The experimental study presented in this paper aims to select the most suitable cutting and offset parameter combination for the wire electrical discharge machining process in order to get the desired surface roughness value for the machined workpieces. A series of experiments have been performed on 1040 steel material of thicknesses 30, 60 and 80 mm, and on 2379 and 2738 steel materials of thicknesses 30 and 60 mm. The test specimens have been cut by using different cutting and offset parameter combination...
Modelling and noise analysis of closed-loop capacitive sigma-delta mems accelerometer Boğa, Biter; Külah, Haluk; Department of Electrical and Electronics Engineering (2009) This thesis presents a detailed SIMULINK model for a conventional capacitive Σ-Δ accelerometer system consisting of a MEMS accelerometer, closed-loop readout electronics, and signal processing units (e.g. decimation filters). By using this model, it is possible to estimate the performance of the full accelerometer system including individual noise components, operation range, open loop sensitivity, scale factor, etc. The developed model has been verified through test results using a capacitive MEMS accelero...
Development of mems technology based microwave and millimeter-wave components Çetintepe, Çağrı; Demir, Şimşek; Department of Electrical and Electronics Engineering (2010) This thesis presents development of microwave lumped elements for a specific surface-micromachining based technology, a self-contained mechanical characterization of fixed-fixed type beams and realization of a shunt, capacitive-contact RF MEMS switch for millimeter-wave applications. Interdigital capacitor, planar spiral inductor and microstrip patch lumped elements developed in this thesis are tailored for a surface-micromachining technology incorporating a single metallization layer, which allows an easy ...

Citation Formats

D. TÜRKAY and S. Yerci, “Two-Dimensional Numerical Analysis of Phosphorus Diffused Emitters on Black Silicon Surfaces,” 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/31595.