Two-Dimensional Numerical Analysis of Phosphorus Diffused Emitters on Black Silicon Surfaces

2018-07-06
TÜRKAY, Deniz
Yerci, Selçuk
In this work, we present an analysis on electrical performance of phosphorus diffused emitters on black silicon surfaces through two-dimensional simulations. In particular, we focus on the extraction and analysis of the emitter saturation current density (J(0e)), the sheet resistance (R-sh), spatial collection efficiency profile and relatedly J(sc) of a solar cell. Using process simulations, we form emitters on periodic triangular structures with various aspect ratios (R) and emitter profiles. We show that for high aspect ratio and highly-doped structures, the trend of increasing J(0e) with junction depth, observed for planar structures, is reversed. While R-sh increase with aspect ratio for shallow emitters, it is weakly dependent on aspect ratio for deep emitters, irrespective of the peak dopant concentration. For highly-doped emitters, the losses in J(sc) can be excessive if the junction depth is larger than the texture size. These losses are negligible for lightly-doped emitters regardless of aspect ratio and junction depth. The trends presented in this study for high aspect ratio emitters in comparison with one-dimensional emitters are expected to provide guidance in the identification of non-idealities that are observed in emitters formed on black silicon surfaces, such as additional surface and bulk defects.
Citation Formats
D. TÜRKAY and S. Yerci, “Two-Dimensional Numerical Analysis of Phosphorus Diffused Emitters on Black Silicon Surfaces,” 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/31595.