Visible and 1.54 mu m Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering

Date

2010-01-01

Author

Yerci, Selçuk
Kucheyev, Sergei O.
VAN BUUREN, Tony
Basu, Soumendra N.
Dal Negro, Luca

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In this paper, we present our main results on the structural and optical properties of light-emitting amorphous silicon nitride (SiN(x)) films fabricated by reactive magnetron cosputtering. In particular, we discuss the origin of the visible emission in amorphous silicon nitride films and investigate the optical emission properties of Erbium-doped amorphous silicon nitride (Er:SiN(x)). The mechanisms of Er excitation and de-excitation in Er:SiN(x) are discussed in relation to the engineering of efficient light sources at 1.54 mu m for on-chip nanophotonics applications. These results suggest that Er-doped amorphous silicon nitride films have a large potential for the fabrication of optically active photonic devices based on the Si technology.

Subject Keywords

Amorphous semiconductors, Erbium, Photoluminescence, Silicon alloys

URI

https://hdl.handle.net/11511/31639

Journal

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

DOI

https://doi.org/10.1109/jstqe.2009.2032516

Collections

Graduate School of Natural and Applied Sciences, Article

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Citation Formats

S. Yerci, S. O. Kucheyev, T. VAN BUUREN, S. N. Basu, and L. Dal Negro, “Visible and 1.54 mu m Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering,” IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, pp. 114–123, 2010, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/31639.