Sensitization of the 1.54μm Er emission in Amorphous Silicon Nitride Films

2009-12-01
Yerci, Selçuk
Basu, Soumendra N.
Negro, Luca Dal
We report on the fabrication, structural and optical properties of Er doped amorphous silicon nitride. The effect of excess Si on the sensitization of the 1.54 mum Er emission will be discussed.

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Citation Formats
S. Yerci, S. N. Basu, and L. D. Negro, “Sensitization of the 1.54μm Er emission in Amorphous Silicon Nitride Films,” 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/31557.