Sensitization of the 1.54μm Er emission in Amorphous Silicon Nitride Films

Yerci, Selçuk
Basu, Soumendra N.
Negro, Luca Dal
We report on the fabrication, structural and optical properties of Er doped amorphous silicon nitride. The effect of excess Si on the sensitization of the 1.54 mum Er emission will be discussed.


Visible and 1.54 mu m Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering
Yerci, Selçuk; Kucheyev, Sergei O.; VAN BUUREN, Tony; Basu, Soumendra N.; Dal Negro, Luca (2010-01-01)
In this paper, we present our main results on the structural and optical properties of light-emitting amorphous silicon nitride (SiN(x)) films fabricated by reactive magnetron cosputtering. In particular, we discuss the origin of the visible emission in amorphous silicon nitride films and investigate the optical emission properties of Erbium-doped amorphous silicon nitride (Er:SiN(x)). The mechanisms of Er excitation and de-excitation in Er:SiN(x) are discussed in relation to the engineering of efficient li...
Planar silicon-rich nitride resonators doped with neodymium
Olaosebikan, Debo; Lipson, Michal; Yerci, Selçuk; Negro, Luca Dal (2011-12-01)
We report on the characterization of neodymium doped silicon rich nitride resonators at 1550nm. We demonstrate the feasibility of use in photonic circuits and demonstrate ring resonators with quality factors of > 5,000.
Structural properties of a-Si films and their effect on aluminum induced crystallization
Tankut, Aydin; Karaman, Mehmet; Ozkol, Engin; Canlı, Sedat; Turan, Raşit (2015-10-01)
In this paper, we report the influence of the structural properties of amorphous silicon (a-Si) on its subsequent crystallization behavior via the aluminum induced crystallization (AIC) method. Two distinct a-Si deposition techniques, electron beam evaporation and plasma enhanced chemical vapor deposition (PECVD), are compared for their effect on the overall AIC kinetics as well as the properties of the final poly-crystalline (poly-Si) silicon film. Raman and FTIR spectroscopy results indicate that the PECV...
Molecular dynamics study of random and ordered metals and metal alloys
Kart, Hasan Hüseyin; Tomak, Mehmet; Department of Physics (2004)
The solid, liquid, and solidification properties of Pd, Ag pure metals and especially PdxAg1-x alloys are studied by using the molecular dynamics simulation. The effects of temperature and concentration on the physical properties of PdxÞAg1-x are analyzed. Sutton-Chen (SC) and Quantum Sutton-Chen (Q-SC) many-body potentials are used as interatomic interactions which enable one to investigate the thermodynamic, static, and dynamical properties of transition metals. The simulation results such as cohesive ene...
Investigation of structural and electronic properties of ZnCdTe ternary alloy nanostructures
Kurban, Mustafa; Erkoç, Şakir; Department of Physics (2016)
Nanostructures, including II-VI compound semiconductors, have attracted enormous attention in a wide range of applications of nanotechnology due to the unusual mechanical, electrical and thermal properties under varying size, geometry, temperature and pressure when compared to corresponding bulk materials. However, these properties are not directly measurable by experiments because of the methods or the availability of the experimental tools, so theoretical models and computations play an important role in ...
Citation Formats
S. Yerci, S. N. Basu, and L. D. Negro, “Sensitization of the 1.54μm Er emission in Amorphous Silicon Nitride Films,” 2009, Accessed: 00, 2020. [Online]. Available: