Sensitization of the 1.54μm Er emission in Amorphous Silicon Nitride Films

Date

2009-12-01

Author

Yerci, Selçuk
Basu, Soumendra N.
Negro, Luca Dal

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We report on the fabrication, structural and optical properties of Er doped amorphous silicon nitride. The effect of excess Si on the sensitization of the 1.54 mum Er emission will be discussed.

Subject Keywords

Silicon alloys, Erbium, Photoluminescence, Amorphous semiconductors

URI

https://hdl.handle.net/11511/31557

DOI

https://doi.org/10.1109/group4.2009.5338293

Collections

Graduate School of Natural and Applied Sciences, Conference / Seminar

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Citation Formats

S. Yerci, S. N. Basu, and L. D. Negro, “Sensitization of the 1.54μm Er emission in Amorphous Silicon Nitride Films,” 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/31557.