Structural and Optical Properties of Ga2Se3 Crystals by Spectroscopic Ellipsometry

Date

2019-04-01

Author

Güler, Işıkhan
Hasanlı, Nızamı
Babayeva, R. F.

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Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i epsilon(2)) and refractive index (N=n+ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2eV to 6.2eV at 300K. From the analyses of second-energy derivatives of epsilon(1) and epsilon(2), interband transition energies (critical points) were determined. Absorption coefficient-photon energy dependency allowed us to achieve a band gap energy of 2.02eV. Wemple and DiDomenico single effective oscillator and Spitzer-Fan models were accomplished and various optical parameters of the crystal were reported in the present work.

Subject Keywords

Semiconductors, Optical properties, Optical constants, Critical points

URI

https://hdl.handle.net/11511/32285

Journal

JOURNAL OF ELECTRONIC MATERIALS

DOI

https://doi.org/10.1007/s11664-019-07000-4

Collections

Graduate School of Natural and Applied Sciences, Article

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Citation Formats

I. Güler, N. Hasanlı, and R. F. Babayeva, “Structural and Optical Properties of Ga2Se3 Crystals by Spectroscopic Ellipsometry,” JOURNAL OF ELECTRONIC MATERIALS, pp. 2418–2422, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32285.