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Structural and Optical Properties of Ga2Se3 Crystals by Spectroscopic Ellipsometry
Date
2019-04-01
Author
Güler, Işıkhan
Hasanlı, Nızamı
Babayeva, R. F.
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Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i epsilon(2)) and refractive index (N=n+ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2eV to 6.2eV at 300K. From the analyses of second-energy derivatives of epsilon(1) and epsilon(2), interband transition energies (critical points) were determined. Absorption coefficient-photon energy dependency allowed us to achieve a band gap energy of 2.02eV. Wemple and DiDomenico single effective oscillator and Spitzer-Fan models were accomplished and various optical parameters of the crystal were reported in the present work.
Subject Keywords
Semiconductors
,
Optical properties
,
Optical constants
,
Critical points
URI
https://hdl.handle.net/11511/32285
Journal
JOURNAL OF ELECTRONIC MATERIALS
DOI
https://doi.org/10.1007/s11664-019-07000-4
Collections
Graduate School of Natural and Applied Sciences, Article
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I. Güler, N. Hasanlı, and R. F. Babayeva, “Structural and Optical Properties of Ga2Se3 Crystals by Spectroscopic Ellipsometry,”
JOURNAL OF ELECTRONIC MATERIALS
, pp. 2418–2422, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32285.