Structural and Optical Properties of Ga2Se3 Crystals by Spectroscopic Ellipsometry

Date

2019-04-01

Author

Güler, Işıkhan
Işık, Mehmet
Hasanlı, Nızamı
Gasanova, L. G.
Babayeva, R. F.

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Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i epsilon(2)) and refractive index (N=n+ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2eV to 6.2eV at 300K. From the analyses of second-energy derivatives of epsilon(1) and epsilon(2), interband transition energies (critical points) were determined. Absorption coefficient-photon energy dependency allowed us to achieve a band gap energy of 2.02eV. Wemple and DiDomenico single effective oscillator and Spitzer-Fan models were accomplished and various optical parameters of the crystal were reported in the present work.

Subject Keywords

Semiconductors, Optical properties, Optical constants, Critical points

URI

https://hdl.handle.net/11511/32285

Collections

Graduate School of Natural and Applied Sciences, Article