XPS characterization of Bi and Mn collected on atom-trapping silica for AAS

Suzer, S
Ertas, N
Ataman, Osman Yavuz
The chemical state of analyte species collected on a water-cooled silica tube during atom-trapping atomic absorption spectrometric determination is investigated with the use of X-ray photoelectron spectroscopy (XPS) for Bi and Mn. Analysis of the Bi 4f(7/2) peak reveals that the chemical state of Bi is +3 during initial trapping (before the atomization stage), but an additional 0-valence state of Bi is also observed after the atomization stage. With the use of the measured Mn 2p(3/2) binding energy together with the observed 3s multiplet splitting, the chemical state of Mn is determined as +2 in all stages. Together with our previous determination of 0 valence for Au, it is now postulated that the stability of certain valence states of the three elements (Au, Bi, and Mn) on the silica matrix can be correlated to their electrochemical reduction potentials.


X-ray photoelectron spectroscopic characterization of Au collected with atom trapping on silica for atomic absorption spectrometry
Suzer, S; Ertas, N; Kumser, S; Ataman, Osman Yavuz (1997-10-01)
The nature of analyte species collected on a cooled silica tube for atom-trapping atomic absorption spectrometric determination was investigated with the use of X-ray photoelctron spectroscopy (XPS). An XPS spectrum of gold deposited on atom-trapping silica tubes reveals a Au 4f(7/2) peak with a binding energy of 84.8 (+/-0.2) eV, which falls in the middle of the binding energies corresponding to zerovalent Au(0) at 84.0 eV and that of monovalent Au(I) at 85.2 eV, The corresponding energy for Au vapor depos...
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Ertaş, Gülay (2006-01-01)
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Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation
Yerci, Selçuk; Yıldız, İlker; BAROZZİ, MARİO; BERSANİ, MASSİMO; Turan, Raşit (2007-07-15)
Depth profiles of Si nanocrystals formed in sapphire by ion implantation and the effect of charging during X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS) measurements have been studied. Atomic concentration and the chemical environment of Si, Al, and O have been measured as a function of depth from the sample surface by SIMS and XPS. Both as-implanted and annealed samples have been analyzed to understand the effect of nanocrystal formation on the depth distribution, chemic...
XPS measurements for probing dynamics of charging
Suzer, Sefik; Sezen, Hikmet; Ertaş, Gülay; Dana, Aykutlu (2010-01-01)
The technique of recording X-ray photoemission data while the sample rod is subjected to +/- 10.0V (dc) or square-wave pulses (ac) with varying frequencies in the range of 10(-3) to 10(3) HZ for probing charging/discharging dynamics of dielectric materials, is reviewed. Application of this technique introduces charging shifts as well as broadening of the peaks, which depend non-linearly on the polarity, as well as on the frequency of the pulses applied. These changes have been measured on: (i) an artificial...
XPS study of pulsed Nd : YAG laser oxidized Si
Aygun, G.; Atanassova, E.; Kostov, K.; Turan, Raşit (Elsevier BV, 2006-08-15)
X-ray photoelectron spectra (XPS) of thin SiO2 layers grown by pulsed Nd:YAG laser at a substrate temperature of 748 K are presented, The peak decomposition technique combined with depth profiling is employed to identify the composition and chemical states of the film structure. It is established that the oxide is non-stoichiometric, and contains all oxidation states of Si in different amounts throughout the film. The interface Si/laser-grown oxide is not abrupt, and the coexistence of Si2O3 and Si2O suboxi...
Citation Formats
S. Suzer, N. Ertas, and O. Y. Ataman, “XPS characterization of Bi and Mn collected on atom-trapping silica for AAS,” APPLIED SPECTROSCOPY, pp. 479–482, 1999, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32461.