XPS study of pulsed Nd : YAG laser oxidized Si

Aygun, G.
Atanassova, E.
Kostov, K.
Turan, Raşit
X-ray photoelectron spectra (XPS) of thin SiO2 layers grown by pulsed Nd:YAG laser at a substrate temperature of 748 K are presented, The peak decomposition technique combined with depth profiling is employed to identify the composition and chemical states of the film structure. It is established that the oxide is non-stoichiometric, and contains all oxidation states of Si in different amounts throughout the film. The interface Si/laser-grown oxide is not abrupt, and the coexistence of Si2O3 and Si2O suboxides in a relatively wide interfacial region is found. It is concluded that post-oxidation annealing is necessary in order to improve the microstructure of both oxide and near interface region.


ERKOC, S; Katırcıoğlu, Şenay (Elsevier BV, 1989-01-01)
The local density-of-states calculation has been carried out for the amorphous silicon thin film generated by molecular-dynamics simulation by melting and quenching process. It is found that thin amorphous silicon film has a metallic phase on the free surface region.
Kinetics of fcc-Al nanocrystallization in Al90Tb10 metallic glass
DEMIRTAS, T.; Kalay, Yunus Eren (Elsevier BV, 2013-10-15)
The crystallization kinetics of Al90Tb10 amorphous alloy were investigated by a combined study of differential scanning calorimetry (DSC), transmission electron microscopy (TEM), Cu-K alpha X-ray diffraction (XRD) analyses and microhardness measurements. Amorphous to fcc-Al transformation kinetics were descried through Johnson-Mehl-Avrami OMA) approach based on the isothermal DSC hold at 220 degrees C. XRD and TEM revealed the formation of highly populated (similar to 10(21) m(-3)) fcc-Al nanocrystals after...
Hasanlı, Nızamı; MELNIK, NN; RAGIMOV, AS (Wiley, 1983-01-01)
Measurements are made of polarized Raman scattering and infrared reflection spectra of twenty two compositions of GaS1‐xSex layer mixed crystals grown by the Bridgman method. Besides the usual one‐mode and two‐mode behaviours of phonon modes, a number of more complex dependences characterized by the appearance of additional bands in the spectra of mixed crystals are observed. Their appearance is accounted for by the uncovering of the Brillouin zone due to the disturbance of the periodicity of the crystal la...
Admittance analysis of an MIS structure made with PECVD deposited a-SiNx : H thin films
Atilgan, I; Ozder, S; Ozdemir, O; Katircioglu, B (Elsevier BV, 1999-07-01)
a-SiNx:H thin films, prepared by the PECVD technique, were optically and electrically characterized. The frequency dependent trap admittance derived for the MIS structure in the accumulation gate voltage regime was revised. Based on these results an omitted multiplying factor was included into the derivation. An extension of the tunnelling model in the depletion bias regime was used in comparison with the widely accepted statistical model and finally, the more general feature of the tunnelling-based approac...
Evolution of magnetic and structural properties of TiO2 with Co-doping
Topal, Ugur; Ozkan, Husnu; Bakan, Halil I.; Cankur, Oktay; Topal, Kevser (Elsevier BV, 2008-03-15)
This paper presents the phase formations and magnetic properties of Co-doped TiO2 synthesized by the colloidal and ammonium nitrate melt techniques (ANMT). The phase formations and ferromagnetic properties were studied with XRD and SQUID magnetometry. Crystallization of the TiO2 rutile lattice was completed at 1000 degrees C and that was preserved during annealing up to 1300 degrees C. For the samples annealed at 1200 degrees C, elemental analysis has shown that the colloidal technique leads to a single-pha...
Citation Formats
G. Aygun, E. Atanassova, K. Kostov, and R. Turan, “XPS study of pulsed Nd : YAG laser oxidized Si,” JOURNAL OF NON-CRYSTALLINE SOLIDS, pp. 3134–3139, 2006, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40309.