Temperature dependence of Raman-active modes of TlGaS2 layered crystals: An anharmonicity study

Date

2004-08-01

Author

Yuksek, NS
Hasanlı, Nızamı
Ozkan, H
Aydinli, A

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The temperature dependence (16 - 300 K) of unpolarized Raman spectra from TlGaS2 layered crystals was measured in the frequency range of 10 - 400 cm(-1). The analysis of the experimental data showed that the temperature dependencies of the phonon frequencies and linewidths were well described by considering the contributions from thermal expansion and lattice anharmonicity. The anharmonic contribution (phonon-phonon coupling) was found to be due to three-phonon processes. The present work demonstrates that the interlayer Raman mode at 42.6 cm(-1) shifts toward high frequency as the temperature is raised from 16 to 300 K.

Subject Keywords

TlGaS2, Layered crystals, Anharmonicity, Phonon-phonon coupling

URI

https://hdl.handle.net/11511/54969

Journal

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Collections

Department of Physics, Article

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Temperature dependence of Raman-active modes of TIGaS2 layered crystals: An anharmonicity study Yuksek, N.s.; Hasanlı, Nızamı; Ozkan, H.; Aydinli, A. (2004-08-01) The temperature dependence (16 - 300 K) of unpolarized Raman spectra from TIGaS2 layered crystals was measured in the frequency range of 10 - 400 cm-1. The analysis of the experimental data showed that the temperature dependencies of the phonon frequencies and linewidths were well described by considering the contributions from thermal expansion and lattice anharmonicity. The anharmonic contribution (phonon-phonon coupling) was found to be due to three-phonon processes. The present work demonstrates that th...
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Temperature dependence of the spetroscopic and structural properties of T1GaS2 and T1InS2 crystals Açıkgöz, Muhammed; Özkan, Hüsnü; Department of Physics (2004) The results of photoluminescence (PL) spectra of TlGaS2 single crystal were reported in the 500-1400 nm wavelength and in the 15-115 K temperature range. Three broad PL bands with an asymmetric Gaussian lineshapes were observed to be centered at 568 nm (A-band), 718 nm (B-band) and 1102 nm (C-band). The shift of the emission band peak energy as well as the change of the half-width of the emission band with temperature and excitation laser intensity were also studied. We analyzed the observed results using t...

Citation Formats

N. Yuksek, N. Hasanlı, H. Ozkan, and A. Aydinli, “Temperature dependence of Raman-active modes of TlGaS2 layered crystals: An anharmonicity study,” JOURNAL OF THE KOREAN PHYSICAL SOCIETY, pp. 501–506, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/54969.