Trapping centers in undoped GaS layered single crystals

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2003-08-01

Author

Hasanlı, Nızamı
Yuksek, NS
Salihoglu, O

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Nominally undoped p-GaS layered single crystals were grown using the Bridgman technique. Thermally stimulated current measurements in the temperature range 10-300 K were performed at a heating rate of 0.10 K/s. The analysis of the data revealed six trap levels at 0.05, 0.06, 0.12, 0.63, 0.71, and 0.75 eV. The calculations for these traps yielded 1.2x10(-21), 2.9x10(-23), 2.4x10(-21), 8.0x10(-9), 1.9x10(-9) and 4.3x10(-10) cm(2) for the capture cross sections and 1.6x10(13), 5.0x10(12), 7.3x10(12), 1.2x10(14), 8.9x10(13) and 2.6x10(13) cm(-3) for the concentrations, respectively.

Subject Keywords

General Materials Science, General Chemistry

URI

https://hdl.handle.net/11511/34903

Journal

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

DOI

https://doi.org/10.1007/s00339-002-2035-y

Collections

Department of Physics, Article

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Citation Formats

N. Hasanlı, N. Yuksek, and O. Salihoglu, “Trapping centers in undoped GaS layered single crystals,” APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, pp. 603–606, 2003, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34903.