Low temperature crystallization of amorphous silicon by gold nanoparticle

Date

2013-08-01

Author

Karaman, M.
AYDIN, MURAT
Sedani, S. H.
ERTÜRK, KADİR
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

91
views

0
downloads

Single crystalline Si thin film fabricated on glass substrate by a process called Solid Phase Crystallization (SPC) is highly desirable for the development of high efficiency and low cost thin film solar cells. However, the use of ordinary soda lime glass requires process temperatures higher than 600 degrees C. Crystallization of Si film at around this temperature takes place in extremely long time exceeding 20 h in most cases. In order to reduce this long process time, new crystallization techniques such as Metal Induced Crystallization (MIC) using thin metal films as a catalyst layer is attracting much attention. Instead of using continuous metal films, the use of metal nanoparticles offers some advantages. In this work, gold thin films were deposited on aluminum doped zinc oxide (AZO) coated glass and then annealed for nanoparticle formation. Amorphous silicon was then deposited by e-beam evaporation onto metal nanoparticles. Silicon films were annealed for crystallization at different temperatures between 500 degrees C and 600 degrees C. We showed that the crystallization occurs at lower temperatures and with higher rates with the inclusion of gold nanoparticles (AuNP). Raman and XRD results indicate that the crystallization starts at temperatures as low as 500 degrees C and an annealing at 600 degrees C for a short process time provides sufficiently good crystallinity.

Subject Keywords

Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Condensed Matter Physics

URI

https://hdl.handle.net/11511/34923

Journal

MICROELECTRONIC ENGINEERING

DOI

https://doi.org/10.1016/j.mee.2013.02.075

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode Gullu, H. H.; Yildiz, D. E.; Surucu, O.; Parlak, Mehmet (Springer Science and Business Media LLC, 2020-06-01) This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark current-voltage measurements, the diode structure showed good rectifying behavior and low saturation current of about two order of magnitude and 1.2 x 10(- 9) A, respectively. According to the conventional thermionic emission model, zero-bias barrier height and ideality factor were calcula...
Electrical response of electron selective atomic layer deposited TiO2-x heterocontacts on crystalline silicon substrates Ahiboz, Doguscan; Nasser, Hisham; Aygun, Ezgi; Bek, Alpan; Turan, Raşit (IOP Publishing, 2018-04-01) Integration of oxygen deficient sub-stoichiometric titanium dioxide (TiO2-x) thin films as the electron transporting-hole blocking layer in solar cell designs are expected to reduce fabrication costs by eliminating high temperature processes while maintaining high conversion efficiencies. In this paper, we conducted a study to reveal the electrical properties of TiO2-x thin films grown on crystalline silicon (c-Si) substrates by atomic layer deposition (ALD) technique. Effect of ALD substrate temperature, p...
Improving the absorption of solar cells using antenna-inspired cavities Karaosmanoğlu, Barışcan; Tuygar, Emre; Topçuoğlu, Ulaş; Ergül, Özgür Salih (Wiley, 2019-08-01) We present new types of nanocavities to improve the absorption of solar cells for energy harvesting in wide frequency ranges of the optical spectrum. Using a full‐wave approach, as opposed to the commonly used ray‐based modeling of the light, antenna‐inspired cavities with horn shapes are proposed and introduced. The effectiveness of the designed cavities is demonstrated in comparison to the conventional textures involving inverted pyramids and nanocones. Highly accurate numerical results show that solar‐ce...
Broad band metamaterial absorber based on wheel resonators with lumped elements for microwave energy harvesting KARAASLAN, MUHARREM; BAĞMANCI, MEHMET; ÜNAL, EMİN; AKGÖL, OĞUZHAN; ALTINTAŞ, OLCAY; Sabah, Cumali (Springer Science and Business Media LLC, 2018-05-01) A new metamaterial absorber structure is designed and characterized both numerically and experimentally for microwave energy harvesting applications. The proposed structure includes four wheel resonators with different dimensions, from which the overall response of the structure can then be obtained by summing all the overlapping frequency responses corresponding to each dimension. The essential operation frequency range of the wheels is selected in such a way that the energy used in wireless communications...
Medium band gap polymer based solution-processed high-kappa composite gate dielectrics for ambipolar OFET Canimkurbey, Betul; Unay, Hande; Cakirlar, Cigdem; Buyukkose, Serkan; Çırpan, Ali; Berber, Savas; Parlak, Elif Alturk (IOP Publishing, 2018-03-28) The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5: PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b: 4, 5-b'] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5: PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipo...

Citation Formats

M. Karaman, M. AYDIN, S. H. Sedani, K. ERTÜRK, and R. Turan, “Low temperature crystallization of amorphous silicon by gold nanoparticle,” MICROELECTRONIC ENGINEERING, pp. 112–115, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34923.