Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode

Date

2020-06-01

Author

Gullu, H. H.
Yildiz, D. E.
Surucu, O.
Parlak, Mehmet

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This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark current-voltage measurements, the diode structure showed good rectifying behavior and low saturation current of about two order of magnitude and 1.2 x 10(- 9) A, respectively. According to the conventional thermionic emission model, zero-bias barrier height and ideality factor were calculated from the forward bias current-voltage curve at room temperature under dark conditions as 0.79 eV and 4.22 eV, respectively. In order to get detailed information about density of interface states and series resistance of this structure, capacitance-voltage and conductance-voltage measurements in the frequency range of 10-1000 kHz were performed. As a result, a decreasing capacitance profile with increasing frequency was obtained. In addition, peak-like behavior in the capacitance profiles was observed and these were found to be the indication of density of states. Further analysis was performed on the evaluation of density of interface states values and these values were calculated by using two different methods: Hill-Coleman and high-low frequency capacitance. These profiles were also analyzed by eliminating the effect of series resistance values on the measured capacitance and conductance; then the values of corrected capacitance and conductance as a function of applied voltage were discussed. Based on these analyses on the capacitive characteristics of the diode, dielectric constant, dielectric loss, loss tangent, electrical conductivity, and the real and imaginary part of electric modulus were investigated for complete understanding on the diode characteristics.

Subject Keywords

Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/37486

Journal

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

DOI

https://doi.org/10.1007/s10854-020-03479-4

Collections

Department of Physics, Article

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Citation Formats

H. H. Gullu, D. E. Yildiz, O. Surucu, and M. Parlak, “Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, pp. 9394–9407, 2020, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37486.