Photo-stimulated luminescence of calcium co-doped BaFBr : Eu2+ x-ray storage phosphors

Date

2003-01-21

Author

SCHLAPP, M
Bulur, Enver
VON SEGGERN, H

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

30
views

0
downloads

The influence of calcium co-doping on the optical properties of the x-ray storage phosphor BaFBr: Eu2+, is determined by photo- stimulated luminescence techniques. It is found that the incorporation of calcium into the lattice results in a broadening of the photo- stimulation peak due to a calcium induced FA(Br, Ca2+)-centre with stimulation maxima at 540 and 680 nm. The optical cross-sections for the photo- stimulated process are determined by utilizing stimulation light with linearly increasing intensity. Furthermore, it is shown that the sensitivity for x-rays, i.e. the number of storage centres formed during x-ray exposure, increases up to a doping level of 1 mol% while it drops rapidly at higher calcium concentrations.

Subject Keywords

Acoustics and Ultrasonics, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Condensed Matter Physics

URI

https://hdl.handle.net/11511/46577

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS

DOI

https://doi.org/10.1088/0022-3727/36/2/305

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Electrical, photo-electrical, optical and structural properties of CdSe thin films deposited by thermal and e-beam techniques Hus, S. M.; Parlak, Mehmet (IOP Publishing, 2008-02-07) In this study, electrical, photo-electrical, optical and structural analyses of CdSe thin films deposited by thermal and e-beam evaporation techniques were carried out by measuring temperature dependent conductivity, mobility, photoconductivity under different illumination intensity, photoresponse, transmission and x-ray diffraction. As a result of these measurements, it was observed that the films deposited by the thermal evaporation technique have room temperature conductivity values approximately three o...
Refractive index, static dielectric constant, energy band gap and oscillator parameters of Ga2SeS single crystals Qasrawi, A. F.; Hasanlı, Nızamı (Wiley, 2007-09-01) The optical properties of Bridgman method grown Ga2SeS crystals have been investigated by means of room-temperature transmittance and reflectance spectral analysis. The optical data have revealed direct and indirect allowed transition band gaps of 2.49 and 2.10 eV, respectively. The room-temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as...
Assessment of InSb photodetectors on Si substrates Ozer, S; Beşikci, Cengiz (IOP Publishing, 2003-03-07) We present the detailed characteristics of small area (33 x 33 mum(2)) InSb photodiodes grown on GaAs coated Si substrates by molecular beam epitaxy. In spite of very large lattice mismatch, 80 K peak detectivity of similar to1 x 10(10) cm Hz(1/2) W-1 has been measured under backside illumination without anti-reflection coating. Differential resistance at 80 K is limited by Ohmic leakage under small reverse bias and trap assisted tunnelling (TAT) under moderately large reverse bias. In the temperature range...
Excitonic effects on the nonlinear optical properties of small quantum dots KARABULUT, İBRAHİM; Safak, H.; Tomak, Mehmet (IOP Publishing, 2008-08-07) The excitonic effects on the nonlinear optical properties of small quantum dots with a semiparabolic confining potential are studied under the density matrix formalism. First, within the framework of the strong confinement approximation, we present the excitonic states and then calculate the excitonic effects on the nonlinear optical properties, such as second harmonic generation, third harmonic generation, nonlinear absorption coefficient and refractive index changes. We find the explicit analytical expres...
Perturbation analysis of sheath evolution, with application to plasma source ion implantation Bektursunova, RM; Demokan, O (IOP Publishing, 2001-02-07) A perturbation model has been developed to describe the evolution of an expanding plasma sheath around a cathode after a high-voltage negative pulse is applied to the cathode, simulating the conditions in devices such as those used for plasma source ion implantation. The set of governing equations consists of two coupled collisionless fluid equations for ions, and Poisson's equation and Boltzmann's assumption for electrons. The time-dependent, self-consistent expressions for the potential, ion density and i...

Citation Formats

M. SCHLAPP, E. Bulur, and H. VON SEGGERN, “Photo-stimulated luminescence of calcium co-doped BaFBr : Eu2+ x-ray storage phosphors,” JOURNAL OF PHYSICS D-APPLIED PHYSICS, pp. 103–108, 2003, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46577.