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Compositional dependence of the Raman lineshapes in GaSxSe1-x layered mixed crystals
Date
2005-09-01
Author
Hasanlı, Nızamı
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The Raman spectra of GaSxSe1-x layered mixed crystals were studied for a wide range of composition (0 <= x <= 1) at 300 and 10 K. The effect of crystal disorder on the linewidth broadening of shear and compressional modes is discussed. The asymmetry in the Raman lineshape was analyzed for intralayer modes exhibiting one-mode behavior. Copyright (c) 2005 John Wiley & Sons, Ltd.
Subject Keywords
Spectroscopy
,
General Materials Science
URI
https://hdl.handle.net/11511/35474
Journal
JOURNAL OF RAMAN SPECTROSCOPY
DOI
https://doi.org/10.1002/jrs.1375
Collections
Department of Physics, Article
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N. Hasanlı, “Compositional dependence of the Raman lineshapes in GaSxSe1-x layered mixed crystals,”
JOURNAL OF RAMAN SPECTROSCOPY
, pp. 879–883, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35474.