Compositional dependence of the Raman lineshapes in GaSxSe1-x layered mixed crystals

Date

2005-09-01

Author

Hasanlı, Nızamı

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The Raman spectra of GaSxSe1-x layered mixed crystals were studied for a wide range of composition (0 <= x <= 1) at 300 and 10 K. The effect of crystal disorder on the linewidth broadening of shear and compressional modes is discussed. The asymmetry in the Raman lineshape was analyzed for intralayer modes exhibiting one-mode behavior. Copyright (c) 2005 John Wiley & Sons, Ltd.

Subject Keywords

Spectroscopy, General Materials Science

URI

https://hdl.handle.net/11511/35474

Journal

JOURNAL OF RAMAN SPECTROSCOPY

DOI

https://doi.org/10.1002/jrs.1375

Collections

Department of Physics, Article

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Citation Formats

N. Hasanlı, “Compositional dependence of the Raman lineshapes in GaSxSe1-x layered mixed crystals,” JOURNAL OF RAMAN SPECTROSCOPY, pp. 879–883, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35474.