A high-performance silicon-on-insulator MEMS gyroscope operating at atmospheric pressure

Date

2007-03-30

Author

Alper, Said Emre
Azgın, Kıvanç
Akın, Tayfun

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This paper presents a new, high-performance silicon-on-insulator (SOI) MEMS gyroscope with decoupled oscillation modes. The gyroscope structure allows it to achieve matched-resonance-frequencies, large drive-mode oscillation amplitude, high sense-mode quality factor, and low mechanical cross-talk. The gyroscope is fabricated through the commercially available SOIMUMPS process of MEMSCAP Inc. The fabricated gyroscope has minimum capacitive sense gaps of 2.6 mu m and a structural silicon thickness of 25 mu m, and it fits into a chip area smaller than 3 mm x 3 mm. The fabricated gyroscope is hybrid connected to a CMOS capacitive interface ASIC chip, which is fabricated in a standard 0.6 mu m CMOS process. The characterization of the hybrid-connected gyroscope demonstrates a low measured noise-equivalent rate of 90 degrees/h/Hz(1/2) at atmospheric pressure, eliminating the need for a vacuum package for a number of applications. R-2-non-linearity of the gyroscope is measured to be better than 0.02%. The gyroscope has a low quadrature signal of 70 degrees/s and a short-term bias stability of 1.5 degrees/s. The angular rate sensitivity of the gyroscope is 100 mu V/(degrees/s) at atmospheric pressure, which improves 24 times to 2.4 mV/(degrees/s) at vacuum. The noise-equivalent rate of the gyroscope at 20 mTorr vacuum is measured to be 35 degrees/h/Hz(1/2), which can be improved further by reducing the electromechanical noise.

Subject Keywords

Instrumentation, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Condensed Matter Physics, Metals and Alloys, Gyroscope, Angular rate sensor, SOI gyroscope, Mechanical decoupling

URI

https://hdl.handle.net/11511/35755

Collections

Department of Mechanical Engineering, Article