Determination of trapping parameters in Tl4Ga3InSe8 single crystals by thermally stimulated luminescence

Date

2014-05-15

Author

Delice, S.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

182
views

0
downloads

Thermo luminescence (IL) measurements were performed on Tl4Ga3InSe8 layered single crystals grown by Bridgman method in the temperature range of 10-200 K. After illuminating the sample with blue light at 10 K and heating at a rate of 1.0 K s(-1) in dark, TL curve exhibited peaks around 46 and 123 K. Thermal activation energies of the trap levels corresponding to the observed peaks were determined using curve fitting, initial rise and peak shape methods. Analyses have revealed the presence of two defect centers with activation energies of 7 and 41 meV. The consistency between the theoretical predictions for slow retrapping and experimental results showed that the retrapping process for the observed centers was negligible. Measurements at different heating rates and illumination temperatures were also carried out for the high-temperature peak. Distribution of traps has been established as a result of experiments. An increase of activation energy from 45 to 147 meV was revealed with the change of illumination temperature from 40 to 80 K.

Subject Keywords

Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/36027

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2014.02.007

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Investigation of localized levels in GaS0.5Se0.5 layered crystals by means of electrical, space-charge limited current and photoconductivity measurements Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2002-11-16) To identify the localized levels in GaS0.5Se0.5 single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 250-400 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at 0.31 eV below the conduction band with a density of about 1.3 x 10(15) cm(-3). The conductivity data above 320 K reveal a...
Calculation of the Infrared Frequencies as a Function of Temperature Using the Volume Data in the Ferroelectric Phase of NaNO2 Yurtseven, Hasan Hamit (Informa UK Limited, 2014-02-17) We calculate the temperature dependence of the infrared frequencies of the TO and LO modes with the symmetries of A(1), B-1 and B-2 mainly in the ferroelectric phase of NaNO2. This calculation is carried out using the volume dependence of the infrared frequencies through the mode Gruneisen parameter in this crystal. The volume dependences of the infrared frequencies are fitted to the observed frequencies by using constant mode Gruneisen parameter in the ferroelectric phase of NaNO2. Our results show that th...
Characterization of c-axis oriented Y-Ba-Cu-O thin films prepared by PVD on LaAlO3 (100) and SrTiO3 (100) substrates Ozenbas, MA; Gungoren, T (Elsevier BV, 2000-11-01) In this study, high T-c superconducting thin films of Y-Ba-Cu-O system have been prepared onto single crystals of LaAlO3 (100) and SrTiO3 (100) by resistive evaporation of YF3, BaF2 and Cu powders and a subsequent multi-stage annealing. In the deposition process, two different methods were used: mixed-powder method and sequential-deposition method. The best quality films were achieved on LaAlO3 substrates by using sequential-deposition technique with offset critical transition temperature of 88.1 K. Charact...
Multiphonon absorption processes in layered structured TlGaS2, TlInS2 and TlGaSe2 single crystals IŞIK, MEHMET; Hasanlı, Nızamı; KORKMAZ ÖZKAN, FİLİZ (Elsevier BV, 2013-07-15) The infrared transmittance and Raman scattering spectra in TlGaS2, TlInS2 and TlGaSe2 layered single crystals grown by Bridgman method were studied in the frequency ranges of 400-1500 and 10-400 cm(-1), respectively. Three, three and five bands observed at room temperature in IR transmittance spectra of TlGaS2, TlInS2 and TlGaSe2, respectively, were interpreted in terms of multiphonon absorption processes. (C) 2013 Elsevier By. All rights reserved.
Radiative donor-acceptor pair recombination in TlInS2 single crystals Aydinli, A; Hasanlı, Nızamı; Yilmaz, I; Serpenguzel, A (IOP Publishing, 1999-07-01) Photoluminescence (PL) spectra of TlInS2 layered single crystals were investigated in the 500-860 nm wavelength region and in the 11.5-100 K temperature range. We observed two PL bands centred at 515 nm (2.41 eV, A band) and 816 nm (1.52 eV, B band) at T = 11.5 K and an excitation intensity of 7.24 FV cm(-2). A detailed study of the A band was carried out as a function of temperature and excitation laser intensity. A red shift of the A band position was observed for both increasing temperature and decreasin...

Citation Formats

S. Delice and N. Hasanlı, “Determination of trapping parameters in Tl4Ga3InSe8 single crystals by thermally stimulated luminescence,” PHYSICA B-CONDENSED MATTER, pp. 37–41, 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36027.