Characterization of c-axis oriented Y-Ba-Cu-O thin films prepared by PVD on LaAlO3 (100) and SrTiO3 (100) substrates

Date

2000-11-01

Author

Ozenbas, MA
Gungoren, T

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

217
views

0
downloads

In this study, high T-c superconducting thin films of Y-Ba-Cu-O system have been prepared onto single crystals of LaAlO3 (100) and SrTiO3 (100) by resistive evaporation of YF3, BaF2 and Cu powders and a subsequent multi-stage annealing. In the deposition process, two different methods were used: mixed-powder method and sequential-deposition method. The best quality films were achieved on LaAlO3 substrates by using sequential-deposition technique with offset critical transition temperature of 88.1 K. Characterization studies by SEM/EDS of the films on LaAlO3 and SrTiO3 substrates suggested preferential orientation. XRD examinations of these films showed c-axis orientation of the superconducting phase.

Subject Keywords

Electrical and Electronic Engineering, Energy Engineering and Power Technology, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/65588

Journal

PHYSICA C

DOI

https://doi.org/10.1016/s0921-4534(00)01258-2

Collections

Department of Metallurgical and Materials Engineering, Article

Suggestions

OpenMETU
Core

PVD growth and characterization of YBCO thin films on polycrystalline alumina substrates: phase separation Ozenbas, MA; Gungoren, T (Elsevier BV, 2000-11-01) In this study, high T-c superconducting thin films of Y-Ba-Cu-O system have been prepared onto polycrystalline alpha -Al2O3 substrates by resistive evaporation of YF3, BaF2, and Cu powders and a subsequent multi-stage annealing. In the deposition process, two different methods were used: mixed-powder method and sequential-deposition method. The best quality films were achieved on alpha -Al2O3 substrates by using sequential-deposition technique with offset critical transition temperature of 80.6 K. Sequentia...
Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy Serincan, U; Kartopu, G; Guennes, A; Finstad, TG; Turan, Raşit; Ekinci, Y; Bayliss, SC (IOP Publishing, 2004-02-01) Ge nanocrystals formed in a SiO2 matrix by ion implantation were studied by Raman spectroscopy. It is shown that Raman analysis based on the phonon confinement model yields a successful explanation of the peculiar characteristics resulting from the nanocrystals. A broadening and a shift in the Raman peak are expected to result from the reduced size of the crystals. Asymmetry in the peak is attributed to the variations in the size of the nanocrystals. These effects were observed experimentally for the Ge nan...
Effect of thermal neutron irradiation in boron-doped melt-textured YBCO superconductors Topal, U; Dorosinskii, L; Ozkan, H; Yavuz, H (Elsevier BV, 2003-05-01) Y1.6Ba2.3Cu3.3Ox superconductors with different amounts of boron doping have been synthesized using the MPMG technique. Undoped and boron-doped samples were irradiated with thermal neutrons to study the effect of defects produced by the fission reaction, B(n,alpha)Li, on the pinning and the critical current. We observed that the pinning and the critical current density were improved as a result of thermal neutron irradiation. This improvement was slightly stronger for the boron-doped samples compared to the...
Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy Altan, Hakan; Pham, D.; Grebel, H.; Federici, J. F. (IOP Publishing, 2007-05-01) The effect of high-kappa dielectric HfO2 films on 200 mm diameter p-type silicon substrates was investigated and compared with conventional dielectric material, SiO2. We employed all-optical characterization methods using terahertz (THz) time-domain spectroscopy and visible cw pump/THz probe spectroscopy. Measurements were performed on two sets of samples, each set containing both HfO2 and SiO2 coated wafers with varying thickness of oxide layer. One set had a protective coating of either photoresist or Si3...
Determination of trapping parameters in Tl4Ga3InSe8 single crystals by thermally stimulated luminescence Delice, S.; Hasanlı, Nızamı (Elsevier BV, 2014-05-15) Thermo luminescence (IL) measurements were performed on Tl4Ga3InSe8 layered single crystals grown by Bridgman method in the temperature range of 10-200 K. After illuminating the sample with blue light at 10 K and heating at a rate of 1.0 K s(-1) in dark, TL curve exhibited peaks around 46 and 123 K. Thermal activation energies of the trap levels corresponding to the observed peaks were determined using curve fitting, initial rise and peak shape methods. Analyses have revealed the presence of two defect cent...

Citation Formats

M. Ozenbas and T. Gungoren, “Characterization of c-axis oriented Y-Ba-Cu-O thin films prepared by PVD on LaAlO3 (100) and SrTiO3 (100) substrates,” PHYSICA C, pp. 2365–2366, 2000, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/65588.