Study on the Structural and Electrical Properties of Sequentially Deposited Ag-Ga-In-Te Thin Films

Date

2015-02-01

Author

Coskun, EMRE
Gullu, H. H.
Parlak, Mehmet
Ercelebi, C.

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

31
views

0
downloads

The structural properties and electrical conduction mechanisms of Ag-Ga-In-Te thin films deposited by a combination of e-beam and thermal evaporation methods were studied for various annealing temperatures. Structural analysis showed the existence of InTe and InTe binary phases at the early stage of crystallization and monophase of AgGaInTe with the main orientation along (112) direction following the post-annealing at 400 C. The effects of the structural changes on electrical properties and temperature dependence of the electrical conductivity of Ag-Ga-In-Te thin films were studied in the temperature range of 90-400 K. The analysis of electrical conductivity revealed the Efros-Shklovskii variable range hopping (VRH) mechanism in between 90 and 210 K and Mott VRH mechanisms for the temperature range of 250-400 K for all deposited films. The VRH parameters including average hopping distance, average hopping energy and characteristic temperature coefficient for Efros-Shklovskii and Mott VRH mechanisms were determined and discussed in detail.

Subject Keywords

Thin films, Electrical conductivity, Transport mechanism, Crystal structure, X-ray diffraction

URI

https://hdl.handle.net/11511/47564

Journal

JOURNAL OF LOW TEMPERATURE PHYSICS

DOI

https://doi.org/10.1007/s10909-014-1245-y

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Investigation of structural and optical parameters of Cu-Ag-In-Se thin films deposited by thermal evaporation method Gullu, H. H.; CANDAN, İDRİS; COŞKUN, EMRE; Parlak, Mehmet (2015-01-01) Annealing effect on the structural and optical properties of the quaternary Cu-Ag-In-Se thin film deposited by the thermal evaporation has been investigated. The evaporation source was prepared by using vertical Bridgman-Stockbarger crystal growth system. Structural analysis indicated that annealing the films following to the deposition resulted in the changes from amorphous to polycrystalline phase with the preferred orientation along (1 1 2) direction. In order to determine the optical properties of the t...
Investigation of physical properties of quaternary AgGa0.5In0.5Te2 thin films deposited by thermal evaporation Karaagac, H.; Parlak, Mehmet (Elsevier BV, 2010-8) The aim of this study is to understand the structural, optical and photo-electrical properties of the quaternary chalcogenide AgGa 0.5In0.5Te2 thin films deposited onto the glass substrates by thermal evaporation of the single crystalline powder. Energy dispersive X-ray analysis (EDXA) showed remarkable change in atomic percentage of the constituent elements after annealing. The X-ray diffraction (XRD) of the films below the annealing temperature of 300°C indicated the polycrystalline structure with co-exis...
Studies on device properties of an n-AgIn5Se8/p-Si heterojunction diode KALELİ, Murat; Parlak, Mehmet; Ercelebi, C. (2011-10-12) In this study, polycrystalline thin films of ternary AgIn5Se8 compounds with n-type conductivity were deposited on p-type Si substrates from the powder of a Ag3In5Se9 single crystal by a thermal evaporation technique. Transport and photo-transport properties of the In/n-AgIn5Se8/p-Si/Al sandwich structure were investigated by analyzing temperature-dependent dc current-voltage (I-V), and photo-response measurements carried out in the temperature range of 200-360 K. In order to obtain the series resistance (R...
Investigation of optical parameters of thermally evaporated ZnSe thin films Gullu, H. H.; Coşkun, Emre; Parlak, Mehmet (2015-04-29) In this work, zinc selenide (ZnSe) thin films were deposited by thermal evaporation method using pure elemental (Zn and Se) sources. The physical properties of the films have been investigated in terms of the structural and optical characterizations depending on the post-annealing process under nitrogen atmosphere in the temperature between 300 and 500 degrees C for 30 min. The structural and compositional analyses were carried out by means of X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy...
Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode Coskun, EMRE; Gullu, H. H.; CANDAN, İDRİS; Bayrakli, O.; Parlak, Mehmet; Ercelebi, C. (2015-06-01) In this work, p-(Ag-Ga-In-Te) polycrystalline thin films were deposited on soda-lime glass and n-type Si substrates by e-beam evaporation of AgGa0.5In0.5Te2 crystalline powder and the thermal evaporation of Ag powder, sequentially in the same chamber. The carrier concentration and mobility of the Ag-Ga-In-Te (AGIT) film were determined as 5.82 x 10(15) cm(-3) and 13.81 cm(2)/(V s) as a result of Hall Effect measurement. The optical analysis indicated that the band gap values of the samples were around 1.58 ...

Citation Formats

E. Coskun, H. H. Gullu, M. Parlak, and C. Ercelebi, “Study on the Structural and Electrical Properties of Sequentially Deposited Ag-Ga-In-Te Thin Films,” JOURNAL OF LOW TEMPERATURE PHYSICS, pp. 162–173, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47564.